Proceedings ArticleDOI
A 110 GHz LNA with 20dB gain and 4dB noise figure in an 0.13μm SiGe BiCMOS technology
TLDR
In this paper, a monolithically integrated W-band low-noise-amplifier realized in an 0.13μm SiGe BiCMOS technology is presented, which utilizes a two-stage cascode topology with inductive emitter degeneration for simultaneous noise and power matching.Abstract:
In this paper, the authors present a monolithically integrated W-band low-noise-amplifier realized in an 0.13μm SiGe BiCMOS technology. The design utilizes a two-stage cascode topology, with inductive emitter degeneration for simultaneous noise and power matching. The paper identifies critical design parameters, and presents careful modeling results. Measurement results show excellent agreement with the simulations, and the circuit achieves 20 dB gain and 4 dB noise figure up to 110 GHz. To the authors' knowledge, this demonstrates the best noise performance up to date on a silicon platform in this frequency range.read more
Citations
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Journal ArticleDOI
A SiGe D-Band Low-Noise Amplifier Utilizing Gain-Boosting Technique
A. Cagri Ulusoy,Peter Song,Wasif Tanveer Khan,Mehmet Kaynak,Bernd Tillack,John Papapolymerou,John D. Cressler +6 more
TL;DR: In this paper, a D-band low-noise amplifier with gain boosting is implemented in a 0.13 µm$ SiGe BiCMOS technology, occupying 0.4 µm $2.
Proceedings ArticleDOI
A 122-150 GHz LNA with 30 dB gain and 6.2 dB noise figure in SiGe BiCMOS technology
TL;DR: In this paper, a D-Band Low Noise Amplifier (LNA) for imaging applications designed in an advanced 90 nm SiGe BiCMOS process is presented, which consists of three cascode stages and one common-emitter stage and achieves peak gain of 30 dB and 3 dB bandwidth at 122-150 GHz.
Proceedings ArticleDOI
Key components of a D-band Dicke-radiometer in 90 nm SiGe BiCMOS technology
TL;DR: In this paper, a single-pole double-throw (SPDT) switch is presented utilizing PIN diodes, with a measured insertion loss of 2 dB and an isolation of 20 dB at 140 GHz.
Proceedings ArticleDOI
A W-band power amplifier with LC balun in 0.13 μm SiGe BiCMOS process
TL;DR: In this article, a differential W-band power amplifier combined with LC balun in a commercial 0.13 μm SiGe BiCMOS technology is presented. But the performance of the proposed amplifier is limited by the bypass capacitor at the upper transistor.
Proceedings ArticleDOI
High-performance W-band LNA and SPDT switch in 0.13µm SiGe HBT technology
TL;DR: In this work, the authors present high performance W-band building blocks in an 0.13μm SiGe HBT technology utilizing reverse-saturated HBTs, demonstrating state-of-the-art performance.
References
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Journal ArticleDOI
SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications
TL;DR: The silicon-germanium heterojunction bipolar transistor (SiGe HBT) as mentioned in this paper is the first practical bandgap-engineered device to be realized in silicon and has achieved state-of-the-art performance.
Proceedings ArticleDOI
Half-Terahertz SiGe BiCMOS technology
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A Passive W-Band Imaging Receiver in 65-nm Bulk CMOS
TL;DR: This work represents the first W-band passive imaging receiver to be implemented in standard CMOS with this level of integration, and a version of the receiver without the input SPDT switch has a peak responsivity of over 200 kV/W and a minimum NEP of less than 0.1 pW/ Hz.
Journal ArticleDOI
$W$ -Band Amplifiers With 6-dB Noise Figure and Milliwatt-Level 170–200-GHz Doublers in 45-nm CMOS
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Journal ArticleDOI
A W-band CMOS Receiver Chipset for Millimeter-Wave Radiometer Systems
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