Journal ArticleDOI
A CMOS voltage reference
Yannis Tsividis,R.W. Ulmer +1 more
TLDR
A method for developing a reference voltage in CMOS integrated circuits is described, and the principle of the suggested voltage reference is explained and the final implementation is presented.Abstract:
A method for developing a reference voltage in CMOS integrated circuits is described. The circuit uses MOS devices operating in the weak inversion region, as well as a bipolar device formed without process modifications. A brief description of this region of operation is given. Then, the principle of the suggested voltage reference is explained and the final implementation is presented. Higher order effects are discussed, and results from an integrated prototype given.read more
Citations
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Book
Design of Analog CMOS Integrated Circuits
TL;DR: The analysis and design techniques of CMOS integrated circuits that practicing engineers need to master to succeed can be found in this article, where the authors describe the thought process behind each circuit topology, but also consider the rationale behind each modification.
Journal ArticleDOI
A precision curvature-compensated CMOS bandgap reference
Bang-Sup Song,P.R. Gray +1 more
TL;DR: In this article, a precision curvature-compensated switched-capacitor bandgap reference is described which uses a standard digital CMOS process and achieves temperature stability significantly lower than has previously been reported for CMOS circuits.
Journal ArticleDOI
A low-voltage low-power voltage reference based on subthreshold MOSFETs
TL;DR: In this paper, a low-voltage low-power CMOS voltage reference independent of temperature is presented based on subthreshold MOSFETs and on compensating a PTAT-based variable with the gate-source voltage of a sub-threshold MCFET, which exhibits an average voltage of about 295 mV with an average temperature coefficient of 119 ppm/spl deg/C.
Journal ArticleDOI
MOS transistors operated in the lateral bipolar mode and their application in CMOS technology
TL;DR: In this paper, the operation of an MOS transistor as a lateral bipolar is described and analyzed qualitatively, and it yields a good bipolar transistor that is fully compatible with any bulk CMOS technology.
Journal ArticleDOI
A Sub-1-V, 10 ppm/ $^{\circ}$ C, Nanopower Voltage Reference Generator
G. De Vita,Giuseppe Iannaccone +1 more
TL;DR: An extreme low power voltage reference generator operating with a supply voltage ranging from 0.9 to 4 V has been implemented in AMS 0.35-mum CMOS process, achieved as the combined effect of a perfect suppression of the temperature dependence of mobility and the compensation of the channel length modulation effect on the temperature coefficient.
References
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Journal ArticleDOI
CMOS analog integrated circuits based on weak inversion operations
Eric A. Vittoz,J. Fellrath +1 more
TL;DR: In this paper, a simple model describing the DC behavior of MOS transistors operating in weak inversion is derived on the basis of previous publications and verified experimentally for both p-and n-channel test transistors of a Si-gate low-voltage CMOS technology.
Journal ArticleDOI
Ion-implanted complementary MOS transistors in low-voltage circuits
R.M. Swanson,James D. Meindl +1 more
TL;DR: In this paper, simple but reasonably accurate equations are derived which describe MOS transistor operation in the weak inversion region near turn-on, and these equations are used to find the transfer characteristics of complementary MOS inverters.
Journal ArticleDOI
Potential of MOS technologies for analog integrated circuits
TL;DR: In this article, the authors review the rapid progress in MOS analog circuit techniques over the past three years, and attempt to estimate the near-term attainable characteristics of MOS LSI circuits which incorporate both analog and digital functions.
Proceedings Article
Potential of MOS Technologies for Analog Integrated Circuits
TL;DR: In this paper, large-scale integrated circuits for many analog and combined analog-digital circuit functions are becoming feasible in N-channel and complementary metal-oxide-semiconductor technologies.