Journal ArticleDOI
A graphical representation of the piezoresistance coefficients in silicon
TLDR
The longitudinal and transverse piezoresistance coefficients at room temperature are plotted as a function of the crystal directions for orientations in the lattice in this article, where the crystal orientation is assumed to be orthogonal.Abstract:
The longitudinal and transverse piezoresistance coefficients, Π(300 K), at room temperature are plotted as a function of the crystal directions for orientations in theread more
Citations
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Journal ArticleDOI
Review: Semiconductor Piezoresistance for Microsystems
TL;DR: This paper provides a comprehensive overview of integrated piezoresistor technology with an introduction to the physics of Piezoresistivity, process and material selection and design guidance useful to researchers and device engineers.
Journal ArticleDOI
Ultra-strength materials
TL;DR: In this paper, an overview of the principal deformation mechanisms of ultra-strength materials is presented, and the fundamental defect processes that initiate and sustain plastic flow and fracture are described, as well as the mechanics and physics of both displacive and diffusive mechanisms.
Journal ArticleDOI
Giant piezoresistance effect in silicon nanowires
Rongrui He,Peidong Yang +1 more
TL;DR: It is reported that Si nanowires possess an unusually large piezoresistance effect compared with bulk, which may have significant implications in nanowire-based flexible electronics, as well as in nanoelectromechanical systems.
Journal ArticleDOI
Piezoresistance effect of silicon
TL;DR: In this paper, a graphical representation of the piezoresistance effect on crystallographic orientations and the effect of impurity concentration on the PR are given for n- and p-Si.
Journal ArticleDOI
Silicon piezoresistive stress sensors and their application in electronic packaging
TL;DR: In this paper, a review of the state-of-the-art in the area of silicon piezore-sistive stress sensor test chips is presented, along with a discussion of sensor theory, calibration methods, and packaging applications.
References
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Journal ArticleDOI
Piezoresistance Effect in Germanium and Silicon
TL;DR: In this article, the complete tensor piezoresistance has been determined experimentally for these materials and expressed in terms of the pressure coefficient of resistivity and two simple shear coefficients.
Journal ArticleDOI
Young's Modulus, Shear Modulus, and Poisson's Ratio in Silicon and Germanium
J. J. Wortman,Robert Evans +1 more
TL;DR: In this paper, the elastic coefficients for an arbitrary rectangular coordinate system are calculated as a function of direction cosines in the crystal and graphs of these moduli are also plotted for orientations in the (100) and (110) planes as well as planes determined by the [110] direction and any perpendicular direction.
Journal ArticleDOI
Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering
Conyers Herring,Erich Vogt +1 more
TL;DR: In this article, a transport theory which allows for anisotropy in the scattering processes is developed for semiconductors with multiple nondegenerate band edge points, and the main effects of scattering on the distribution function over each ellipsoidal constant-energy surface can be described by a set of three relaxation times, one for each principal direction; these are the principal components of an energy-dependent relaxation-time tensor.
Journal ArticleDOI
Piezoresistive Properties of Silicon Diffused Layers
Obert N. Tufte,E. L. Stelzer +1 more
TL;DR: The piezoresistive properties of n and p-type diffused layers formed by the diffusion of impurities into silicon have been investigated in this paper, and the results show a change in the symmetry and the temperature dependence of the large coefficients.