Proceedings ArticleDOI
A high Q RF CMOS differential active inductor
R. Akbari-Dilmaghani,A. Payne,C. Toumazou +2 more
- Vol. 3, pp 157-160
TLDR
The architecture is based on a gyrator-C topology, where tuneable compensation techniques are applied to reduce phase error due to additional device parasitics, thus extending the useable frequency range of the inductor closer to the f/sub t/ of the technology.Abstract:
This paper presents the design of a differential CMOS active inductor for use in applications around 1-1.7 GHz. The architecture is based on a gyrator-C topology, where tuneable compensation techniques are applied to reduce phase error due to additional device parasitics, thus extending the useable frequency range of the inductor closer to the f/sub t/ of the technology. The inductance value and quality factor are also independently tuneable, and simulation results using device parameters from the AMS 0.8 /spl mu/m CMOS process demonstrate operation at 1.5 GHz with a Q of over 300. The implementation of a tuneable bandpass filter using the inductor is also demonstrated.read more
Citations
More filters
Journal ArticleDOI
A 5.4-GHz high-Q tunable active-inductor bandpass filter in standard digital CMOS technology
Haiqiao Xiao,Rolf Schaumann +1 more
TL;DR: In this article, a transistor-only active inductor with an all-NMOS signal path is presented, where the varactor-augmented parasitic capacitance at the only internal node can be partially or fully compensated to permit realizing unlimited values of Q, with little frequency and no power-consumption penalties.
Proceedings ArticleDOI
A high-frequency high-Q CMOS active inductor with DC bias control
TL;DR: In this paper, the design of a very simple CMOS high-Q active inductor suitable for applications at low supply voltage and high frequencies is discussed, where the inductor value, L, and the quality factor, Q, are independently adjustable by two PMOS varactors (variable capacitors).
Proceedings ArticleDOI
A 2.5 V CMOS differential active inductor with tunable L and Q for frequencies up to 5 GHz
TL;DR: In this paper, a differential active inductor in CMOS technology with a supply voltage of 2.5 V is presented, and a self-resonant frequency of 5.6 GHz is achieved.
Patent
Reconfigurable direct RF bandpass sampling receiver and related methods
TL;DR: In this article, a reconfigurable direct radio frequency (RF) bandpass sampling receiver is proposed that provides direct RF sampling of an input signal spectrum passed through a bandpass filter that is tunable over a wide frequency range of interest and that is sampled based on the bandwidth of the filter rather than the bandwidth for the total frequency range.
Patent
Nyquist folded bandpass sampling receivers and related methods
TL;DR: In this article, Nyquist folded bandpass sampling receivers are described that utilize wideband filters and modulated sampling clocks to identify received received signals, where multiple Nyquist zones are allowed to fold on top of each other during sampling.
References
More filters
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Si IC-compatible inductors and LC passive filters
N.M. Nguyen,Robert G. Meyer +1 more
TL;DR: In this paper, passive inductors and LC filters fabricated in standard Si IC technology are demonstrated, and Q-factors from three to eight and inductors up to 10 nH in the gigahertz range have been realized.
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Journal ArticleDOI
A 1 GHz CMOS RF front-end IC for a direct-conversion wireless receiver
TL;DR: An integrated low-noise amplifier and down-conversion mixer operating at 1 GHz has been fabricated for the first time in 1 /spl mu/m CMOS as discussed by the authors, where the overall conversion gain is almost 20 dB, the double-sideband noise figure is 3.2 dB, and the IIP3 is +8 dBm.
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A 2.7 V 900 MHz CMOS LNA and mixer
TL;DR: In this paper, a CMOS low-noise amplifier (LNA) and a mixer for RF front-end applications are described, and a current reuse technique is described that increases amplifier transconductance for the LNA and mixer without increasing power dissipation, compared to standard topologies.
Journal ArticleDOI
VHF CMOS integrated active inductor
TL;DR: In this article, the implementation of an RF CMOS active inductor is described, where the inductor loss is reduced by applying gain enhancement techniques based on cascoding, and the proposed new inductors exhibit lower loss, high self-resonance frequency and wider inductive region.