Journal ArticleDOI
A High-Reliability High-Linearity High-Power RF MEMS Metal-Contact Switch for DC–40-GHz Applications
TLDR
In this article, an mN-level contact and restoring force RF microelectromechanical system metal-contact switch exhibiting high reliability, high linearity, and high power handing for dc-40 GHz applications was presented.Abstract:
This paper presents an mN-level contact and restoring force RF microelectromechanical systems metal-contact switch exhibiting high reliability, high linearity, and high power handing for dc-40-GHz applications. The device, which is insensitive to stress and temperature effects, achieves 1.2-1.5 mN of contact force (per contact) from 80 to 90 V and 1.0 mN of restoring force (per contact). The up-state capacitance is 8 fF, resulting in an isolation of 46, 31, and 14 dB at 1, 6, and 40 GHz, respectively. Measured results show switch resistances of 1-2 Ω and a reliability of >; 100 million cycles at 2-5 W under cold switching at 100 mW under hot-switching conditions, in an unpackaged and standard laboratory environment. Furthermore, the device was tested under prolonged hold-down conditions and demonstrated excellent RF power handling (>;10 W) and dc current handling (>;1 A) capability.read more
Citations
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Journal ArticleDOI
The Search for a Reliable MEMS Switch
TL;DR: In this paper, the authors defined the ideal switch as a device having virtually no insertion loss (Ron = 0 Ω) over a wide frequency range, very high isolation [off-state capacitance (Coff)] = 0 fF), extremely high linearity (IIP2 and IIP3 → infinite), medium-to high-power handling (100 mW to 1 kW), and no dc power consumption.
Journal ArticleDOI
Reconfigurable Radios: A Possible Solution to Reduce Entry Costs in Wireless Phones
TL;DR: In this paper, the advantages of reconfigurable radios in not only increasing the efficiency of spectrum usage but also in potentially reducing the cost of wireless handsets and the barriers for new wireless service providers to enter the market are discussed.
Journal ArticleDOI
Reliability Analysis of Ku-Band 5-bit Phase Shifters Using MEMS SP4T and SPDT Switches
Sukomal Dey,Shiban K. Koul +1 more
TL;DR: In this article, a Ku-band microelectromechanical systems (MEMS) based 5-bit phase shifter using dc contact single-pole-four-throw (SP4T) and single-single-double-throw switches is presented.
Journal ArticleDOI
High Power Latching RF MEMS Switches
TL;DR: In this article, the authors proposed a high stroke latching thermal actuator for single-pole-single-throw (SPST), single-pole-Double-Throw (SPDT), Single-Pole-Triple-throw and single-position-triple-thrust (SP3T) switches.
References
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Journal ArticleDOI
Squeeze film air damping in MEMS
Minhang Bao,Heng Yang +1 more
TL;DR: In this paper, the authors present an overview and report the recent progress of research on squeeze film air damping in MEMS, including the squeezing of perforated and slotted plate, squeezing of rarefied air and squeezing of torsion mirrors.
Journal ArticleDOI
Measurement of the mechanical properties of electroplated gold thin films using micromachined beam structures
TL;DR: In this article, the Young's modulus, residual stress, and stress gradient of electroplated gold thin films using surface micromachined beam structures were measured, and the average residual stress was found to be tensile in nature.
Journal ArticleDOI
Lifetime Measurements on a High-Reliability RF-MEMS Contact Switch
TL;DR: In this paper, the mean cycles-to-failure measured on an ensemble of switches was 430 billion switch cycles and the longest lifetime exhibited without degradation of the switch was 914 billion cycles.
Journal ArticleDOI
Microswitches and microrelays with a view toward microwave applications
TL;DR: In this article, surface micromachined microswitches and microrelays that are based on electroplated materials are described. But their lifetime is limited to 107 cycles cold switched at current levels exceeding 10 ma.
Journal ArticleDOI
Modeling, simulation and measurement of the dynamic performance of an ohmic contact, electrostatically actuated RF MEMS switch
TL;DR: In this article, the authors present a 3D nonlinear dynamic model which describes the transient mechanical analysis of an ohmic contact RF MEMS switch, using finite element analysis in combination with the finite difference method.