Journal ArticleDOI
The Search for a Reliable MEMS Switch
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TLDR
In this paper, the authors defined the ideal switch as a device having virtually no insertion loss (Ron = 0 Ω) over a wide frequency range, very high isolation [off-state capacitance (Coff)] = 0 fF), extremely high linearity (IIP2 and IIP3 → infinite), medium-to high-power handling (100 mW to 1 kW), and no dc power consumption.Abstract:
The RF community has long been searching for the ideal switch since the birth of electronics, and it is defined as a device having virtually no insertion loss (Ron = 0 Ω) over a wide frequency range, very high isolation [off-state capacitance (Coff)] = 0 fF), extremely high linearity (IIP2 and IIP3 → infinite), medium- to high-power handling (100 mW to 1 kW), and no dc power consumption. Our entire RF infrastructure ecosystem, from communication system networks, to satellite systems, to wideband spectral analysis, to instrumentation and radar systems, uses a variety of switches for signal routing and control (attenuation, phase shifting, etc.). The ideal switch was achieved long time ago using electromechanical relays, and even after nearly 100 years, it is still the best RF switch ever made from an electrical perspective [1]. It has very low insertion loss (Ron <;1 Ω), very high isolation (Coff of few fF), very high linearity and high power handling (100 mW to 50 W). However, it is bulky, expensive, and has an average lifetime of few million cycles.read more
Citations
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Journal ArticleDOI
Nanoelectromechanical Switches for Low-Power Digital Computing
TL;DR: Recent progress toward scaled relay technology can overcome the energy-efficiency limit of CMOS technology is reviewed, providing an overview of the different relay designs and experimental results achieved by various research groups, as well as of relay-based IC design principles.
Journal ArticleDOI
Reconfigurable Radios: A Possible Solution to Reduce Entry Costs in Wireless Phones
TL;DR: In this paper, the advantages of reconfigurable radios in not only increasing the efficiency of spectrum usage but also in potentially reducing the cost of wireless handsets and the barriers for new wireless service providers to enter the market are discussed.
Journal ArticleDOI
High Power Latching RF MEMS Switches
TL;DR: In this article, the authors proposed a high stroke latching thermal actuator for single-pole-single-throw (SPST), single-pole-Double-Throw (SPDT), Single-Pole-Triple-throw and single-position-triple-thrust (SP3T) switches.
Journal ArticleDOI
Geometrically reconfigurable 3D mesostructures and electromagnetic devices through a rational bottom-up design strategy.
Ke Bai,Xu Cheng,Zhaoguo Xue,Honglie Song,Lei Sang,Fan Zhang,Fei Liu,Luo Xiang,Wen Huang,Yonggang Huang,Yihui Zhang +10 more
TL;DR: A mechanically guided scheme to build geometrically reconfigurable 3D mesostructures through a bottom-up design strategy based on a class of elementary reconfigurability structures with the simplest ribbon geometries is introduced.
Journal ArticleDOI
Design and fabrication of a low insertion loss capacitive RF MEMS switch with novel micro-structures for actuation
TL;DR: In this paper, an electrostatic driven capacitive RF MEMS switch is proposed to achieve low actuation voltage and low up-state capacitance, which can be integrated in RF systems without additional circuits to isolate the DC voltage, so the system is simplified.
References
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Journal ArticleDOI
RF MEMS switches and switch circuits
TL;DR: In this paper, the authors concentrate on electrostatic switches at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques.
Journal ArticleDOI
Micromechanical switches fabricated using nickel surface micromachining
TL;DR: Micromechanical switches have been fabricated in electroplated nickel using a four-level surface micromachining process as mentioned in this paper, with three terminals, a source, a drain, and a gate.
Journal ArticleDOI
RF MEMS phase shifters: design and applications
TL;DR: In this paper, the reliability of MEMS phase shifters is worse than of single switches since they employ 8-16 MEMS switches and do not tolerate a failure in any of the switches.
Journal ArticleDOI
MEM relay for reconfigurable RF circuits
Robert E. Mihailovich,Moonil Kim,Jonathan Hacker,Emilio A. Sovero,J. Studer,J.A. Higgins,J.F. DeNatale +6 more
TL;DR: In this paper, the authors describe a microelectromechanical (MEM) relay technology for high-performance reconfigurable RF circuits, which is a metal contact relay with electrical isolation between signal and drive lines.
Journal ArticleDOI
Single and Four-Element $Ka$ -Band Transmit/Receive Phased-Array Silicon RFICs With 5-bit Amplitude and Phase Control
TL;DR: In this article, a single and four-element SiGe BiCMOS single-and multi-element phased array with 5-bit phase and amplitude control is presented, which is based on the All-RF architecture with RF phase shifters and attenuators and a 4:1 passive power combining/dividing network.