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Journal ArticleDOI

A low-temperature ultrahigh-vacuum scanning tunneling microscope with rotatable magnetic field

Chr. Wittneven, +3 more
- 01 Oct 1997 - 
- Vol. 68, Iss: 10, pp 3806-3810
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TLDR
In this paper, a low-temperature ultra-high-vacuum (UHV) scanning tunneling microscope setup with a combination of a solenoid and a split-pair magnet is presented.
Abstract
We present a new design of a low-temperature ultrahigh-vacuum (UHV) scanning tunneling microscope setup with a combination of a solenoid and a split-pair magnet The scanning tunneling microscope can be operated at temperatures down to 8 K and in a rotatable magnetic field of up to 1 T Magnetic fields of up to 7 T perpendicular and 2 T parallel to the sample surface can be applied The UHV part of the system allows in situ preparation and low energy electron diffraction/Auger analysis of samples First topographic and spectroscopic measurements on p-InAs(110) are presented

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Citations
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Journal ArticleDOI

Spontaneous atomic-scale magnetic skyrmion lattice in two dimensions

TL;DR: In this article, a two-dimensional square lattice of skyrmions on the atomic length scale was described as the magnetic ground state of a hexagonal Fe film of one-atomic-layer thickness on the Ir(111) surface.
Journal ArticleDOI

Scanning tunneling spectroscopy of high-temperature superconductors

TL;DR: The use of tunneling microscopy and spectroscopy has played a central role in the experimental verification of the microscopic theory of superconductivity in classical superconductors as discussed by the authors.
Journal ArticleDOI

Invited review article: A 10 mK scanning probe microscopy facility.

TL;DR: The spectral resolution capabilities with tunneling spectroscopy results obtained on an epitaxial graphene sample resolving the quantum Landau levels in a magnetic field, including the sublevels corresponding to the lifting of the electron spin and valley degeneracies are shown.
Journal ArticleDOI

Real-space observation of spin-split molecular orbitals of adsorbed single-molecule magnets

TL;DR: First direct real-space images of spin-split molecular orbitals of a single-molecule magnet adsorbed on a ferromagnetic nanostructure are presented and the magnitude of the spin-splitting as well as the charge state of the adsorbing molecule is determined.
Journal ArticleDOI

Scanning Tunneling Spectroscopy

TL;DR: For many years, STM lacked chemical specificity; however, the recent development of STM-IETS (inelastic electron tunneling spectroscopy) has allowed us to measure the vibrational spectrum of a single molecule.
References
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Journal ArticleDOI

Temperature dependence of the energy gap in semiconductors

TL;DR: In this article, a relation for the variation of the energy gap (E g ) with temperature (T ) in semiconductors is proposed. And the equation satisfactorily represents the experimental data for diamond, Si, Ge, 6H-SiC, GaAs, InP and InAs.
Journal ArticleDOI

Confinement of electrons to quantum corrals on a metal surface.

TL;DR: Tuning spectroscopy performed inside of the corrals revealed a series of discrete resonances, providing evidence for size quantization and STM images show that the corral's interior local density of states is dominated by the eigenstate density expected for an electron trapped in a round two-dimensional box.
Journal ArticleDOI

Atom-selective imaging of the GaAs(110) surface.

TL;DR: Etude par microscopie tunnel a balayage influence sur l'image obtenue de the tension and of the structure de surface influence on the image obtene de la tension and de the structure of surface.
Journal ArticleDOI

An easily operable scanning tunneling microscope

K. Besocke
- 01 Mar 1987 - 
TL;DR: In this paper, a new type of scanning tunneling microscope (STM) has been developed by the combination of several equivalent x-y-z piezoelements into one compact operation unit.
Journal ArticleDOI

Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors.

TL;DR: In this article, tunneling spectroscopy measurements of the (110) cleaved surface of GaAs, InP, GaSb, InAs, and InSb are presented.
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