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Journal ArticleDOI

A new a-Si:H thin-film transistor pixel circuit for active-matrix organic light-emitting diodes

Joon-Chul Goh, +3 more
- 26 Aug 2003 - 
- Vol. 24, Iss: 9, pp 583-585
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TLDR
In this article, a pixel circuit using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs), composed of three switching and one driving TFT, for active-matrix organic light-emitting diodes (AMOLEDs) with a voltage source method was proposed.
Abstract
We propose a new pixel circuit using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs), composed of three switching and one driving TFT, for active-matrix organic light-emitting diodes (AMOLEDs) with a voltage source method. The circuit simulation results based on the measured threshold voltage shift of a-Si:H TFTs by gate-bias stress indicate that this circuit compensates for the threshold voltage shifts over 10000 h of operation.

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Citations
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Journal ArticleDOI

Driving schemes for a-Si and LTPS AMOLED displays

TL;DR: In this paper, the voltage and current programming schemes for AMOLED displays are reviewed and design considerations for both current and voltage schemes with focus on stability and programming speed for both amorphous silicon and low temperature polysilicon (LTPS) pixel circuits.
Patent

System and methods for aging compensation in AMOLED displays

TL;DR: In this article, a driving transistor is used to drive current through a light emitting device according to programming information which is stored on a storage device, such as a capacitor, and a switching transistor is included to select the circuits for programming, monitoring, and emission.
Patent

Method and system for programming, calibrating and driving a light emitting device display

TL;DR: In this paper, a method and system for programming, calibrating and driving a light emitting device display is described, which may include extracting a time dependent parameter of a pixel for calibration.
Journal ArticleDOI

A Novel LTPS-TFT Pixel Circuit Compensating for TFT Threshold-Voltage Shift and OLED Degradation for AMOLED

TL;DR: In this article, a pixel circuit that uses low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) composed of one driving and four switching TFTs for active-matrix organic light-emitting diodes (AMOLEDs) with a voltage-source method is presented.
Journal ArticleDOI

AMOLED Pixel Circuit With Electronic Compensation of Luminance Degradation

TL;DR: In this paper, a voltage-programmed pixel circuit using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) for active-matrix organic light-emitting diodes (AMOLEDs) is presented.
References
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Journal ArticleDOI

Bias‐stress‐induced stretched‐exponential time dependence of charge injection and trapping in amorphous thin‐film transistors

TL;DR: In this article, the threshold voltage instabilities in nitride/oxide dual gate dielectric amorphous silicon (a•Si:H) thin-film transistors are investigated as a function of stress time, stress temperature, and stress bias.
Journal ArticleDOI

Approximation of wiring delay in MOSFET LSI

TL;DR: Two approximation methods for wiring delay in MOS LSI are studied and the widely used L ladder circuit model is found to be a poor approximation, while /spl pi and T ladder circuit models give satisfactory results.
Journal ArticleDOI

Current-source a-Si:H thin-film transistor circuit for active-matrix organic light-emitting displays

TL;DR: In this article, a four thin-film transistor (TFT) circuit based on hydrogenated amorphous silicon (a-Si:H) technology was proposed to provide a constant output current level and can be automatically adjusted for TFT threshold voltage variations.
Journal ArticleDOI

Improved a-Si:H TFT pixel electrode circuits for active-matrix organic light emitting displays

TL;DR: In this article, two improved four thin-film transistors (TFTs) pixel electrode circuits based on hydrogenated amorphous silicon (a-Si:H) technology have been designed.
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