Journal ArticleDOI
A New Approach of Lateral RF MEMS Switch
Reads0
Chats0
TLDR
In this article, a novel lateral series microwave switch fabricated on a silicon-on-insulator (SOI) substrate with a finite ground coplanar waveguide (FGCPW) configuration is presented.Abstract:
This paper presents a novel lateral series microwave switch fabricated on a silicon-on-insulator (SOI) substrate with a finite ground coplanar waveguide (FGCPW) configuration which is laterally actuated by the electrostatic force. The switch is built with a cantilever beam in the direction of the signal line and a fixed electrode is located opposite the cantilever beam. The mechanical structures are fabricated using SOI deep reactive ion etching (DRIE) and shadow mask technology. The fabricated lateral RF MEMS switch has an isolation of 16 dB at 20 GHz. The insertion loss of the switch is 1 dB and return loss is 15 dB at 20 GHz. The threshold voltage is 19.2 V and switching time is 30 μs.read more
Citations
More filters
Journal ArticleDOI
Low-loss lateral micromachined switches for high frequency applications
TL;DR: In this article, two novel lateral metal-contact radio-frequency microelectromechanical system (RF MEMS) switches are reported, implemented with quasi-finite ground coplanar waveguide (FGCPW) configuration and actuated by applying electrostatic force on a high-aspect-ratio cantilever beam.
Journal ArticleDOI
A single-pole double-throw (SPDT) circuit using lateral metal-contact micromachined switches
TL;DR: In this article, a dc 6 GHz single-pole double-throw (SPDT) switching circuit that employs lateral metal-contact micromachined switches is investigated, which consists of a set of quasi-finite ground coplanar waveguide (FGCPW) transmission lines and a high-aspect-ratio cantilever beam.
Journal ArticleDOI
Prediction of Gap Asymmetry in Differential Micro Accelerometers
TL;DR: The prediction methodology combines the measurement results and analytical derivation to identify the asymmetric error of 30 accelerometers fabricated by DRIE, and indicates that the level of asymmetry induced by fabrication uncertainty is about ±5 × 10−2, and that the absolute error is about±0.2 μm under a 4 μm gap.
Journal ArticleDOI
Modeling the Microstructure Curvature of Boron-Doped Silicon in Bulk Micromachined Accelerometer.
TL;DR: Observations of five groups of proof mass blocks of accelerometers suggest that the theoretical model is effective in determining the buckling value of a fabricated structure.
References
More filters
Journal ArticleDOI
RF MEMS switches and switch circuits
TL;DR: In this paper, the authors concentrate on electrostatic switches at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques.
Journal ArticleDOI
RF-MEMS switches for reconfigurable integrated circuits
TL;DR: In this article, the electrostatic microswitch is used in a number of existing circuits and systems, including radio front-ends, capacitor banks, and time-delay networks, for quasi-optical beam steering and electrically reconfigurable antennas.
Journal ArticleDOI
Micromachined low-loss microwave switches
TL;DR: In this paper, the design and fabrication of a micromechanical capacitive membrane microwave switching device is described, which consists of a thin metallic membrane, which has two states, actuated or unactuated, depending on the applied bias.
Journal ArticleDOI
Innovative micromachined microwave switch with very low insertion loss
Chienliu Chang,Pei-Zen Chang +1 more
TL;DR: In this article, a micromachined microwave switch on a semi-insulating GaAs substrate using a microactuator and a coplanar waveguide (CPW) using electrostatic actuation as the switching mechanism is presented.
Journal ArticleDOI
High-resolution shadow-mask patterning in deep holes and its application to an electrical wafer feed-through
G.-J. Burger,E.J.T. Smulders,Johan W. Berenschot,Theodorus S.J. Lammerink,J.H.J. Fluitman,Satomitsu Imai +5 more
TL;DR: In this paper, a technique to pattern materials in deep holes and/or on non-planar substrate surfaces using shadow masks is presented. But this technique is not suitable for high-resolution shadow masks.