Journal ArticleDOI
A new look at impact ionization-Part II: Gain and noise in short avalanche photodiodes
P. Yuan,K.A. Anselm,Chenming Hu,H. Nie,C. Lenox,Archie L. Holmes,B. G. Streetman,Joe C. Campbell,R.J. McIntyre +8 more
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TLDR
In this paper, a new theory for impact ionization that utilizes history-dependent ionization coefficients to account for the nonlocal nature of the ionization process has been described, and a systematic study of the noise characteristics of GaAs homojunction avalanche photodiodes with different multiplication layer thicknesses is also presented.Abstract:
For Part I see R.J. McIntyre, ibid., vol.46, no.8, pp.1623-31 (1999). In Part I, a new theory for impact ionization that utilizes history-dependent ionization coefficients to account for the nonlocal nature of the ionization process has been described. In this paper, we will review this theory and extend it with the assumptions that are implicitly used in both the local-field theory in which the ionization coefficients are functions only of the local electric field and the new one. A systematic study of the noise characteristics of GaAs homojunction avalanche photodiodes with different multiplication layer thicknesses is also presented. It is demonstrated that there is a definite "size effect" for thin multiplication regions that is not well characterized by the local-field model. The new theory, on the other hand, provides very good fits to the measured gain and noise. The new ionization coefficient model has also been validated by Monte Carlo simulations.read more
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Journal ArticleDOI
Nanoscale avalanche photodiodes for highly sensitive and spatially resolved photon detection
TL;DR: It is demonstrated that the nanowire avalanche photodiodes (nanoAPDs) have ultrahigh sensitivity with detection limits of less than 100 photons, and subwavelength spatial resolution of at least 250 nm, and could open new opportunities for ultradense integrated systems, sensing and imaging applications.
Journal ArticleDOI
A new look at impact ionization-Part I: A theory of gain, noise, breakdown probability, and frequency response
TL;DR: In this article, the authors present a new theory that incorporates history-dependent ionization coefficients, and it is shown that this model can be utilized to calculate the low-frequency properties of avalanche photodiodes (APD's) (gain, noise, and breakdown probability in the Geiger mode) and the frequency response.
Journal ArticleDOI
Impact-ionization and noise characteristics of thin III-V avalanche photodiodes
M.A. Saleh,Majeed M. Hayat,P.P. Sotirelis,Archie L. Holmes,Joe C. Campbell,Bahaa E. A. Saleh,Malvin C. Teich +6 more
TL;DR: Hayat et al. as discussed by the authors showed that a carrier multiplication model that incorporates the effects of dead space provides excellent agreement with the impact ionization and noise characteristics of thin avalanche photodiodes.
Journal ArticleDOI
Avalanche photodiodes with an impact-ionization-engineered multiplication region
TL;DR: In this paper, an impactionization-engineered structure for the multiplication region of avalanche photodiodes is presented, which achieves high gain, low dark current, and very low noise.
Proceedings ArticleDOI
Recent advances in avalanche photodiodes
TL;DR: In this paper, a review of recent advances in linear and Geiger mode avalanche photodiodes (APDs) is presented, focusing on materials and structural modifications to the conventional InP/InGaAs APD that have enabled reduced excess noise and enhanced gainbandwidth products.
References
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Journal ArticleDOI
Multiplication noise in uniform avalanche diodes
TL;DR: In this article, the spectral density of the noise generated in a uniformly multiplying p-n junction can be derived for any distribution of injected carriers, and the analysis is limited to the white noise spectrum only, and to diodes having large potential drops across the multiplying region of the depletion layer.
Journal ArticleDOI
Optical properties of AlxGa1−x As
TL;DR: In this paper, pseudodielectric function data for AlxGa1−xAs alloys of target compositions x=0.00-0.80 in steps of 0.10 were measured by spectroellipsometry.
Journal ArticleDOI
The distribution of gains in uniformly multiplying avalanche photodiodes: Theory
TL;DR: In this paper, the authors derived the probability that a pulse initiated by n electrons in a uniformly multiplying semiconductor diode will result in a total number of electrons (or holes) m, to give a gain m/n, and for the probability Q n,m} that the gain will be m/m or greater.
Journal ArticleDOI
A new look at impact ionization-Part I: A theory of gain, noise, breakdown probability, and frequency response
TL;DR: In this article, the authors present a new theory that incorporates history-dependent ionization coefficients, and it is shown that this model can be utilized to calculate the low-frequency properties of avalanche photodiodes (APD's) (gain, noise, and breakdown probability in the Geiger mode) and the frequency response.
Journal ArticleDOI
Band-structure-dependent transport and impact ionization in GaAs
Hisashi Shichijo,Karl Hess +1 more
TL;DR: In this paper, the authors performed a Monte Carlo simulation of high-field transport in GaAs including a realistic band structure to study the band-structure dependence of electron transport and impact ionization.