A Review of the Progress of Thin-Film Transistors and Their Technologies for Flexible Electronics
TLDR
In this paper, the authors provide a brief overview of the trends of the last three decades in the physical flexibility of various semiconducting technologies, including amorphous-silicon, polycrystalline silicon, oxides, carbon nanotubes, and organics.Abstract:
Flexible electronics enable various technologies to be integrated into daily life and fuel the quests to develop revolutionary applications, such as artificial skins, intelligent textiles, e-skin patches, and on-skin displays. Mechanical characteristics, including the total thickness and the bending radius, are of paramount importance for physically flexible electronics. However, the limitation regarding semiconductor fabrication challenges the mechanical flexibility of thin-film electronics. Thin-Film Transistors (TFTs) are a key component in thin-film electronics that restrict the flexibility of thin-film systems. Here, we provide a brief overview of the trends of the last three decades in the physical flexibility of various semiconducting technologies, including amorphous-silicon, polycrystalline silicon, oxides, carbon nanotubes, and organics. The study demonstrates the trends of the mechanical properties, including the total thickness and the bending radius, and provides a vision for the future of flexible TFTs.read more
Citations
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Novel, Flexible, and Transparent Thin Film Polyimide Aerogels with Enhanced Thermal Insulation and High Service Temperature
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Binary solvent engineering for small-molecular organic semiconductor crystallization
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Low‐temperature elevated‐metal metal‐oxide thin‐film transistors and circuit building blocks on a flexible substrate
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References
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Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
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Zhuangchun Wu,Zhihong Chen,Xu Du,Jonathan Logan,Jennifer Sippel,Maria Nikolou,Katalin Kamarás,John R. Reynolds,David B. Tanner,Arthur F. Hebard,Andrew G. Rinzler +10 more
TL;DR: Characteristics of the fabrication of ultrathin, transparent, optically homogeneous, electrically conducting films of pure single-walled carbon nanotubes indicate broad applicability of the films for electrical coupling in photonic devices.
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TL;DR: In this article, the authors fabricated field effect transistors based on individual single and multi-wall carbon nanotubes and analyzed their performance, showing that structural deformations can make them operate as field-effect transistors.
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Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.