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Journal ArticleDOI

A Wide Locking Range $LC$ -Tank Injection-Locked Frequency Divider

TLDR
In this paper, a wideband injection-locked frequency divider (ILFD) was proposed, which is made of a differential CMOS LC-tank oscillator and is based on the direct injection topology.
Abstract
This letter proposes a wideband injection-locked frequency divider (ILFD) and describes the operation principle of the ILFD. The circuit is made of a differential CMOS LC-tank oscillator and is based on the direct injection topology. The wideband function is obtained by tuning the switch across the tank inductors. The divide-by-two ILFD can provide wide locking range and the measurement results show that at the supply voltage of 1.8 V, the dual-band divider free-running frequencies are from 1.77 to 2.17 GHz for the low-band mode, and from 2.59 to 3.2 GHz for the high-band mode. At the incident power of 0 dBm, the locking range is about 1.7 GHz from the incident frequency 3.31 to 5.01 GHz at low band and 4.06 GHz from 3.94 to 8.0 GHz at high-band mode. The circuit can be used as a single wideband ILFD.

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Citations
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Journal ArticleDOI

A Divide-by-3 Injection Locked Frequency Divider With Single-Ended Input

TL;DR: In this paper, a divide-by-3 CMOS injection-locked frequency divider (ILFDMOS) was proposed, which was realized with a double cross-coupled CMOS LC-tank oscillator with an injection MOS.
Patent

Injection-locked frequency divider

TL;DR: In this paper, an injection-locked frequency divider is presented, which includes a variable reactance unit, signal injection unit, first switch, second switch, first transformer, and second transformer.
Journal ArticleDOI

A CMOS Injection-Locked Frequency Divider Optimized for Divide-by-Two and Divide-by-Three Operation

TL;DR: The proposed circuit does not employ additional inductors as usual in divide-by-three ILFDs, but exploits the combined effect of two independent injection techniques, allowing one to predict the amplitude and phase of oscillation in the locked mode, as well as the locking range, with approximate closed-form expressions.
Journal ArticleDOI

LC-Tank Colpitts Injection-Locked Frequency Divider With Record Locking Range

TL;DR: In this article, a new wide locking range injection-locked frequency divider (ILFD) using a standard 0.18mum CMOS process is presented, which is based on a differential voltage controlled oscillator (VCO) with two embedded injection metal oxide semiconductor field effect transistors (MOSFETs) for coupling external signal to the resonators.
Journal ArticleDOI

Multi-Modulus LC Injection-Locked Frequency Dividers Using Single-Ended Injection

TL;DR: In this article, a new wide-locking range multi-modulus LC-tank injection-locked frequency divider (ILFD) was proposed and was fabricated in a 0.18 mum CMOS process.
References
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Journal ArticleDOI

A CMOS direct injection-locked oscillator topology as high-frequency low-power frequency divider

TL;DR: An injection-locked oscillator topology is presented, based on MOS switches directly coupled to the LC tank of well-known LC oscillators, which features wide locking ranges, a very low input capacitance, and highest frequency capability.
Journal ArticleDOI

A 40-GHz frequency divider in 0.18-/spl mu/m CMOS technology

TL;DR: In this article, a regenerative divide topology is introduced that employs resonance techniques by means of on-chip spiral inductors to tune out the device capacitances, achieving a frequency range of 2.3 GHz at 40 GHz while consuming 31 mW from a 2.5-V supply.
Proceedings ArticleDOI

A 19 GHz 0.5 mW 0.35 /spl mu/m CMOS frequency divider with shunt-peaking locking-range enhancement

TL;DR: In this paper, shunt-peaking is used as an approach to increase the locking range and lower the power dissipation at higher frequencies of a narrow-band injection-locked frequency divider.
Journal ArticleDOI

A wide locking range and low Voltage CMOS direct injection-locked frequency divider

TL;DR: In this paper, a low voltage and wide locking range injection-locked frequency divider using a standard 018/spl mu/m complementary metal oxide semiconductor (CMOS) process is presented.
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