Open AccessJournal Article
Actinic Inspection of EUV Programmed Multilayer Defects and Cross-Comparison Measurements
Kenneth A. Goldberg,Anton Barty,Yanwei Liu,Patrick A. Kearney,Yoshihiro Tezuka,Tsuneo Terasawa,John S. Taylor,Hak-Seung Han,Obert Wood +8 more
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TLDR
In this article, a comparison of measurements made in four different mask-inspection tools: one commercial tool using 488-nm wavelength illumination, one prototype tool that uses 266-nm illumination, and two non-commercial EUV ''actinic'' inspection tools.Abstract:
The production of defect-free mask blanks remains a key challenge for extreme ultraviolet (EUV) lithography. Integral to this effort is the development and characterization of mask inspection tools that are sensitive enough to detect critical defects with high confidence. Using a single programmed-defect mask with a range of buried bump-type defects, we report a comparison of measurements made in four different mask-inspection tools: one commercial tool using 488-nm wavelength illumination, one prototype tool that uses 266-nm illumination, and two non-commercial EUV ''actinic'' inspection tools. The EUV tools include a darkfield imaging microscope and a scanning microscope. Our measurements show improving sensitivity with the shorter wavelength non-EUV tool, down to 33-nm spherical-equivalent-volume diameter, for defects of this type. Measurements conditions were unique to each tool, with the EUV tools operating at a much slower inspection rate. Several defects observed with EUV inspection were below the detection threshold of the non-EUV tools.read more
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EUV high throughput inspection system for defect detection on patterned EUV masks, mask blanks, and wafers
TL;DR: In this article, an EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface and an optic configuration for directing the light from the illuminated surface to the detector.
Proceedings ArticleDOI
An EUV Fresnel zoneplate mask-imaging microscope for lithography generations reaching 8 nm
Kenneth A. Goldberg,Iacopo Mochi,Senajith Rekawa,Nathan Smith,James Macdougall,James Macdougall,Patrick P. Naulleau +6 more
TL;DR: In this paper, the authors presented the potential optical performance capabilities of a next-generation extreme ultraviolet (EUV) mask-imaging microscope, based on the proven optical principle of the SEMATECH Berkeley Actinic Inspection Tool (AIT), but substantially surpassing it in every performance metric.
Proceedings ArticleDOI
EUV and non-EUV inspection of reticle defect repair sites
Kenneth A. Goldberg,Anton Barty,Phillip Seidel,Klaus Edinger,Rainer Fettig,Patrick A. Kearney,Hakseung Han,Obert R. Wood +7 more
TL;DR: In this paper, the authors report the actinic (EUV wavelength) and non-actinic inspection of a multilayer-coated mask blank containing an array of open-field defect repair sites created in different ways.
Journal ArticleDOI
Imaging at the Nanoscale With Practical Table-Top EUV Laser-Based Full-Field Microscopes
Fernando Brizuela,I. D. Howlett,Sergio Carbajo,D. Peterson,Anne Sakdinawat,Yanwei Liu,David Attwood,Mario C. Marconi,Jorge J. Rocca,Carmen S. Menoni +9 more
TL;DR: In this article, the geometry of the table-top extreme-ultraviolet (EUV) microscopes tailored to specific imaging applications is described and an analysis on the microscope's spatial resolution is presented.
Proceedings ArticleDOI
EUV mask reflectivity measurements with micron-scale spatial resolution
Kenneth A. Goldberg,Senajith Rekawa,Charles D. Kemp,Anton Barty,Erik H. Anderson,Patrick A. Kearney,Hakseung Han +6 more
TL;DR: In this paper, the authors describe the unique measurement capabilities of a prototype actinic (EUV wavelength) microscope that is capable of detecting small defects and reflectivity changes that occur on the scale of microns to nanometers.