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Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field

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TLDR
Theoretical results are consistent with the recent experiments and suggest MoS2 as a potential material for gas sensing application because of its ability to be significantly modulated by a perpendicular electric field.
Abstract
Using first-principles calculations, we investigate the adsorption of various gas molecules (H2, O2, H2O, NH3, NO, NO2, and CO) on monolayer MoS2. The most stable adsorption configuration, adsorption energy, and charge transfer are obtained. It is shown that all the molecules are weakly adsorbed on the monolayer MoS2 surface and act as charge acceptors for the monolayer, except NH3 which is found to be a charge donor. Furthermore, we show that charge transfer between the adsorbed molecule and MoS2 can be significantly modulated by a perpendicular electric field. Our theoretical results are consistent with the recent experiments and suggest MoS2 as a potential material for gas sensing application.

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Journal ArticleDOI

Photoresponsive field-effect transistors based on multilayer SnS2 nanosheets

TL;DR: In this paper, a field effect transistors (FET) based on multilayer SnS 2 nanosheets has been fabricated, of which the electrical and photoelectrical properties have been measured.
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Highly-sensitive gas sensor based on two-dimensional material field effect transistor.

TL;DR: A gas sensor based on a 2D material field effect transistor (FET) which uses few-layer black phosphorus, boron nitride and molybdenum disulfide as the top-gate, dielectric layer and conduction channel, but was also capable to differentiate oxidizing and reducing gases.
Journal ArticleDOI

Charge Transfer and Interface Engineering of the Pentacene and MoS2 Monolayer Complex

TL;DR: In this paper, density functional theory computations are performed to investigate the charge transfer and electrostatic potential modulation upon the adsorption of pentacene molecule on the surface of MoS2 monolayer (ML).
Journal ArticleDOI

Dispersion-Corrected Density Functional Theory Investigations of Structural and Electronic Properties of Bulk MoS2: Effect of Uniaxial Strain.

TL;DR: The structural and electronic band structures of the MoS2 with relaxed unit cells are optimized and calculated by the dispersion-corrected density functional theory (DFT-D2) and the energy splitting of Mo4d states is in the range from 0 to 2 eV, which is due to the reduction of the electronic band gap ofMoS2.
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Enhanced NOx adsorption and sensing properties of MoTe2 monolayer by Ni-doping: A first-principles study

TL;DR: Based on the first-principles theory, Li et al. as discussed by the authors studied the adsorption behavior of pristine and Ni-doped MoTe2 (Ni-MoTe2) monolayer towards NOx, in order to explore their potentials to be a resistance-type chemical gas sensor.
References
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Journal ArticleDOI

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set.

TL;DR: An efficient scheme for calculating the Kohn-Sham ground state of metallic systems using pseudopotentials and a plane-wave basis set is presented and the application of Pulay's DIIS method to the iterative diagonalization of large matrices will be discussed.
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Special points for brillouin-zone integrations

TL;DR: In this article, a method for generating sets of special points in the Brillouin zone which provides an efficient means of integrating periodic functions of the wave vector is given, where the integration can be over the entire zone or over specified portions thereof.
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Ab initio molecular dynamics for liquid metals.

TL;DR: In this paper, the authors present an ab initio quantum-mechanical molecular-dynamics calculations based on the calculation of the electronic ground state and of the Hellmann-Feynman forces in the local density approximation.
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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
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Atomically thin MoS2: a new direct-gap semiconductor

TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
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