Journal ArticleDOI
Anomalous degradation in silicon solar cells subjected to high-fluence proton and electron irradiations
Yousuke Morita,Takeshi Ohshima,Isamu Nashiyama,Yasunari Yamamoto,Osamu Kawasaki,Sumio Matsuda +5 more
TLDR
In this article, an anomalous degradation of short-circuit current density (Isc) was observed in a cell irradiated by energetic protons and electrons at high fluence, and the anomalous drop of Isc was caused by the p-type substrate changes into the intrinsiclike layer (Fermi level shift) by the irradiations, followed by an extension of the depletion layer.Abstract:
Distinct from the well-known logarithmic degradation in electrical performances of a crystalline silicon solar cell, an anomalous degradation of short-circuit current density (Isc) was observed in a cell irradiated by energetic protons and electrons at high fluence. From results of proton irradiations with various energies (0.4–10 MeV) and high frequency (1 MHz) capacitance measurements, the anomalous drop of Isc is found to be caused by (1) the p-type substrate changes into the intrinsiclike layer (Fermi level shift) by the irradiations, followed by an extension of the depletion layer, and (2) the drift length of the minority carrier becomes shorter than the depletion layer.read more
Citations
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Journal ArticleDOI
Tolerance of Perovskite Solar Cell to High-Energy Particle Irradiations in Space Environment
Yu Miyazawa,Masashi Ikegami,Hsin-Wei Chen,Takeshi Ohshima,Mitsuru Imaizumi,Kazuyuki Hirose,Tsutomu Miyasaka +6 more
TL;DR: It is found that methylammonium and formamidinium-based lead iodide perovskite solar cells composed of TiO 2 and a conductive polymer, as electron and hole transport materials, can survive against accumulated dose levels up to 10 16 and 10 15 particles/cm 2 of electrons and protons.
Journal ArticleDOI
Experimental and theoretical radiation damage studies on crystalline silicon solar cells
Martín Alejo Alurralde,Mariana Julia Luisa Tamasi,C. J. Bruno,M.G. Martínez Bogado,Juan Carlos Plá,J. Fernández Vázquez,Jordi Duran,J. A. Schuff,A.A. Burlon,Pablo Stoliar,A.J. Kreiner +10 more
TL;DR: In this paper, an experimental facility was developed to asses in situ the degradation of crystalline silicon solar cells, fabricated by the Solar Energy Group of the National Atomic Energy Commission (CNEA), by measuring the currentvoltage characteristic curve.
Journal ArticleDOI
Radiation effects on the performance of flexible perovskite solar cells for space applications
TL;DR: In this paper, the effect of low-energy (1 −1 −MeV) proton radiation on flexible perovskite solar cells (PSCs) was studied.
Journal ArticleDOI
Spectral response of a gamma and electron irradiated pin photodiode
Shinobu Onoda,Toshio Hirao,Jamie S. Laird,H. Mori,I. Okamoto,Yoshiharu Koizumi,Hisayoshi Itoh +6 more
TL;DR: In this article, the optical spectral response of Si pin photodiodes was examined after gamma and electron irradiation and a significant decrease in the peak optical response and peak position with increasing total dose was observed.
Journal ArticleDOI
Comparison of the effects of electron and proton irradiation on n+–p–p+ silicon diodes
S. J. Taylor,Masafumi Yamaguchi,T. Yamaguchi,S. Watanabe,K. Ando,Sumio Matsuda,T. Hisamatsu,S. I. Kim +7 more
TL;DR: After irradiation with high fluences of electrons or protons, the effective carrier concentration in the base of the diodes was reduced dramatically, an effect referred to as “carrier removal,” and the effects upon the device parameters, in particular, the series resistance and saturation current, are discussed in detail.
References
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Book
Solar cell radiation handbook
H. Y. Tada,J. R. Carter +1 more
TL;DR: In this article, a handbook to predict the degradation of solar cell electrical performance in any given space radiation environment is presented, where the interaction of energetic charged particles radiation with solar cells is discussed and the concept of 1 MeV equivalent electron fluence is introduced.
Book
Handbook of Range Distributions for Energetic Ions in All Elements
U Littmark,James F. Ziegler +1 more
Journal ArticleDOI
Radiation defect distribution in proton‐irradiated silicon
W. Wondrak,K. Bethge,D. Silber +2 more
TL;DR: In this article, the authors investigated defect profiles covering a range of ∼100 μm in high-energy proton-irradiated silicon (3 MeV) using deep-level transient spectroscopy.
Journal ArticleDOI
Protons and Deuteron Irradiation Damage in Silicon Solar Cells
TL;DR: In this article, the effects of proton and deuteron irradiation on silicon solar cells were investigated in the energy region of 0.8~2.8 MeV as functions of the particle mass, energy, influence and wave length of the illuminating light.