Journal ArticleDOI
Application of Quarter-Wave Transformers for Precise Measurement of Complex Microwave Conductivity of Semiconductors (Short Papers)
P.K. Roy,A.N. Datta +1 more
TLDR
The utility of a quarter-wave transformer for precise measurement of complex microwave conductivity of semiconductors has been demonstrated in this paper, where it has been shown that the improvement in measurement accuracy is nearly by a factor of 3 over the conventional reflection measurement using a Teflon transformer.Abstract:
The utility of a quarter-wave transformer for precise measurement of complex microwave conductivity of semiconductors has been demonstrated. It has been shown for a chosen conductivity of 9 /spl Omega//spl dot/cm that the improvement in measurement accuracy is nearly by a factor of 3 over the conventional reflection measurement using a Teflon transformer.read more
Citations
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Proceedings ArticleDOI
A free-space method for measurement of complex permittivity of silicon wafers at microwave frequencies
TL;DR: In this paper, the free-space reflection and transmission coefficients of a silicon wafer sandwiched between two teflon plates which are quarter-wavelength at midband were measured in the frequency range of 11-12.5 GHz.
Proceedings ArticleDOI
Microwave Characterization of Silicon Wafer Using Rectangular Dielectric Waveguide
TL;DR: In this article, a vector network analyzer (VNA), a pair of coaxial cable, coaxial to waveguide adapter and dielectric-filled standard gain horn antenna were used to characterize p-type and n-type silicon semiconductor wafers.
Proceedings ArticleDOI
A free-space measurement of complex permittivity of doped silicon wafers using transmission coefficient at microwave frequencies
TL;DR: In this paper, a contactless and non-destructive method is presented to characterize p-type and n-type silicon semiconductor wafers using a spot-focused free-space measurement system.
Proceedings ArticleDOI
Accuracy considerations for dielectric measurements of semiconductor wafers using free space microwave measurement system in 8-13 GHz range
TL;DR: An algorithm using only transmission measurements to calculate the complex permittivity of p-type and n-type silicon semiconductor wafers using a spot-focused free-space measurement system was developed in this article.
Journal ArticleDOI
Materials with required dielectric properties: Computational development and production of polymer‐ceramic composites
TL;DR: In this paper, an inverted power-law mixing rule model computing volume fractions in which three or more prime materials should be taken to get in the resulting homogeneous mixture the required dielectric properties.
References
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Journal ArticleDOI
"Gap Effect" in Measurement of Large Permittivities (Correspondence)
K.S. Champlin,G.H. Glover +1 more
Journal ArticleDOI
Techniques for the Measurement of Complex Microwave Conductivity and the Associated Errors
A. N. Datta,B. R. Nag +1 more
TL;DR: In this paper, an attempt has been made to improve the reflection results from an analysis of the parameters of a circle diagram for reflection coefficient obtained on using a variable reactive termination after the semiconductor-filled waveguide section.
Techniques for the Measurement of Complex Microwave Conductivity and the
A. N. Datta,B. R. Nag +1 more
Journal ArticleDOI
The Calibration of the Slotted Section for Precision Microwave Measurements
TL;DR: In this article, a calibration procedure is presented which compensates rigorously for the effects introduced by discontinuities due to the end of the slot, and due to possible adaptors, coupling elements, bead supports, etc, and the presence of a slot in creating a guide wavelength and characteristic impedance slightly different from that of a guide without a slot.