Journal ArticleDOI
Artificial optoelectronic synapse based on epitaxial Ba0.6Sr0.4TiO3 thin films memristor for neuromorphic computing and image recognition
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In this article , a photoelectrical synaptic system based on high-quality epitaxial Ba0.6Sr0.4TiO3 (BST) films was presented.Abstract:
Electronic synaptic devices with photoelectric sensing function are becoming increasingly important in the development of neuromorphic computing system. Here, we present a photoelectrical synaptic system based on high-quality epitaxial Ba0.6Sr0.4TiO3 (BST) films in which the resistance ramp characteristic of the device provides the possibility to simulate synaptic behavior. The memristor with the Pt/BST/Nb:SrTiO3 structure exhibits reliable I–V characteristics and adjustable resistance modulation characteristics. The device can faithfully demonstrate synaptic functions, such as potentiation and depression, spike time-dependent plasticity, and paired pulse facilitation, and the recognition accuracy of handwritten digits was as high as 92.2%. Interestingly, the functions of visual perception, visual memory, and color recognition of the human eyes have also been realized based on the device. This work will provide a strong candidate for the neuromorphic computing hardware system of photoelectric synaptic devices.read more
Citations
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Journal ArticleDOI
Emulating Synaptic and Nociceptive Behavior via Negative Photoconductivity of a Memristor
TL;DR: In this article , a photoelectric synaptic memristor (PSM) based on Zn/cuprous oxide (Cu) heterostructure is fabricated, which exhibits primary synaptic functions such as long-term potentiation (LTP)/long-term depression (LTD), and spike-timing-dependent plasticity (STDP) by electrical stimulation.
Journal ArticleDOI
Probing switching mechanism of memristor for neuromorphic computing
Linfeng Sun,Estella M. Alonso +1 more
TL;DR: In this paper , conductive atomic force microscopy (CAFM) has been used to study the internal mechanism of memristors, which can be used to observe the switching behavior of Memristors.
Journal ArticleDOI
Emulating Synaptic and Nociceptive Behavior via Negative Photoconductivity of a Memristor
TL;DR: In this paper , a photoelectric synaptic memristor (PSM) based on Zn2SnO4 (ZSO)/cuprous oxide (Cu ${2}}}\text{O}$ ) heterostructure is fabricated.
Journal ArticleDOI
Probing switching mechanism of memristor for neuromorphic computing
TL;DR: In this article , conductive atomic force microscopy (CAFM) has been used to study the internal mechanism of memristors, which can be used to observe the switching behavior of Memristors.
References
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Deep learning with coherent nanophotonic circuits
TL;DR: A new architecture for a fully optical neural network is demonstrated that enables a computational speed enhancement of at least two orders of magnitude and three order of magnitude in power efficiency over state-of-the-art electronics.
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TL;DR: A simple two-terminal optoelectronic resistive random access memory (ORRAM) synaptic devices for an efficient neuromorphic visual system that exhibit non-volatile optical resistive switching and light-tunable synaptic behaviours.
Journal ArticleDOI
SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations
Shinhyun Choi,Scott H. Tan,Zefan Li,Yunjo Kim,Chanyeol Choi,Pai-Yu Chen,Han-Wool Yeon,Shimeng Yu,Jeehwan Kim +8 more
TL;DR: This work demonstrates analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium.
Journal ArticleDOI
Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing.
Elliot J. Fuller,Scott T. Keene,Armantas Melianas,Zhongrui Wang,Sapan Agarwal,Yiyang Li,Yaakov Tuchman,Conrad D. James,Matthew J. Marinella,Jianhua Yang,Alberto Salleo,A. Alec Talin +11 more
TL;DR: An ionic floating-gate memory array based on a polymer redox transistor connected to a conductive-bridge memory (CBM) is introduced, enabling linear and symmetric weight updates in parallel over an entire crossbar array at megahertz rates over 109 write-read cycles.