Journal ArticleDOI
Atomic-scale redistribution of dopants in polycrystalline silicon layers
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TLDR
In this paper, a strong interfacial segregation of dopants to the grain boundaries (GBs) was revealed in the spike annealed samples and the heterogeneous precipitation of C to the GBs was observed, as well as clustering of C in the interior of the grains.Abstract:
80 nm thick polycrystalline silicon (poly-Si) layers implanted with As, P, and C were subjected to spike heating (1000 °C, 1.5 s) or laser anneal (1300 °C, 0.25 ms) and analyzed by atom probe tomography. A strong interfacial segregation of dopants to the grain boundaries (GBs) was revealed in the spike annealed samples. The heterogeneous precipitation of C to the GBs was observed, as well as the clustering of C in the interior of the grains. Theses clusters are also rich in As and P. Their shapes (loop, rod) strongly suggest that these clusters are the result of dopant segregation to extended defects. Nanometer size oxygen clusters were also observed. They originate from the recoil of oxygen atoms during the implantation process through the oxide layer. Laser annealed samples showed a lower segregation excess of dopants to GBs. Consequently, the dopant concentration inside grains was found larger compared to the spike annealed sample. The lower segregation rate at GB is explained by the larger temperature...read more
Citations
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Direct imaging of boron segregation to extended defects in silicon
TL;DR: In this article, a high boron dose (5×1015 cm−2) was implanted with silicon at 30 keV and further annealed at 950°C for 30 s. The sample was analyzed using transmission electron microscopy and atom probe tomography (APT).
Journal ArticleDOI
Efficient n-type doping of Si nanocrystals embedded in SiO2 by ion beam synthesis
TL;DR: In this paper, it is shown that co-implantation with overlapping projected ranges of Si and P or As, followed by a single thermal annealing step is an efficient way to form doped Si nanocrystals (Si-nc's) embedded in SiO2 with diameters of a few nanometers.
Journal ArticleDOI
Tungsten diffusion in silicon
A. De Luca,Alain Portavoce,Michael Texier,Catherine Grosjean,N. Burle,V. Oison,Bernard Pichaud +6 more
TL;DR: In this article, two doses (1013 and 1015 cm−2) of tungsten (W) atoms were implanted in different Si(001) wafers in order to study W diffusion in Si.
Journal ArticleDOI
Three-dimensional evaluation of gettering ability of Σ3{111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy
Yutaka Ohno,Kaihei Inoue,Yuki Tokumoto,Kentaro Kutsukake,Ichiro Yonenaga,Naoki Ebisawa,Hisashi Takamizawa,Yasuo Shimizu,Koji Inoue,Yasuyoshi Nagai,Hideto Yoshida,Seiji Takeda +11 more
TL;DR: In this article, the three-dimensional distribution of impurities (boron, phosphorus, oxygen, and copper) at grain boundaries was determined in a Czochralski-grown silicon single crystal by laser-assisted atom probe tomography (APT) combined with transmission electron microscopy, with a detection limit as low as the order of 0.001 at.
Journal ArticleDOI
Revealing the factors influencing grain boundary segregation of P, As in Si: Insights from first-principles
Dongdong Zhao,Yanjun Li +1 more
TL;DR: In this paper, a systematic investigation upon the interactions between P, As atoms and a series of coincidence site lattice Si GBs was carried out via first-principles calculations.
References
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Book
Atom probe tomography
TL;DR: In this paper, a focused ion beam milling system was used for atom probe tomography for the characterization of the size, morphology and composition of ultrafine features in a variety of materials.
Journal ArticleDOI
Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's
TL;DR: In this article, it has been shown that V/sub th/ fluctuation is mainly caused by the statistical fluctuation of the channel dopant number which explains about 60% of the experimental results.
Journal ArticleDOI
Oxygen precipitation in silicon
TL;DR: A review of the recent advances in the study of oxygen precipitation and of the main properties of oxide precipitates in silicon is presented in this article, where the most important techniques for the characterization of the precipitates are illustrated together with the most interesting and recent results.
Journal ArticleDOI
Modeling statistical dopant fluctuations in MOS transistors
TL;DR: In this paper, the impact of statistical dopant fluctuations on the threshold voltage and device performance of silicon MOSFET's is investigated by means of analytical and numerical modeling, and it is found that the average V/sub T/-shift is positive for long, narrow devices, and negative for short, wide devices.