Journal ArticleDOI
Bandgap and optical transitions in thin films from reflectance measurements
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TLDR
In this paper, a new formulation and method are presented for evaluating bandgap, optical transitions and optical constants from the reflectance data for films deposited onto a non-absorbing substrate, which can be used to evaluate the optical properties of the films.About:
This article is published in Vacuum.The article was published on 1992-04-01. It has received 241 citations till now. The article focuses on the topics: Thin film.read more
Citations
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Optical and AC conductivity behavior of sodium orthosilicate Na2CoSiO4
TL;DR: In this paper, a three-dimensional framework built of alternating corner-sharing CoO4 and SiO4 tetrahedra delimiting cavities, in which Na2CoSiO4 was prepared by an improved solid-state (NCS-SS) and co-precipitation (CoS-CP) methods.
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Bilayer number driven changes in polarizability and optical property in ZnO/TiO2 nanocomposite films prepared by ALD
TL;DR: In this article, the absorption spectra of ZnO/TiO2 bilayer films were obtained in view of incident wavelength range (350-700 nm) to determine the optical energy band gap.
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Optical, structural and morphological properties of synthesized PANI-CSA-PEO-based GaN nanocomposite films for optoelectronic applications
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Electrical transport studies in nanocrystalline CdSe/SiO2 composite films
TL;DR: In this article, SiO2/CdSe/SiO2 composite films in nanocrystalline form were deposited on quartz substrates at ∼20 Pa with deposition temperatures ranging from 220 to 240 K using a multi-target magnetron sputtering system.
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Variation of trap state density and barrier height with Cu/In ratio in CuInSe2 films
TL;DR: In this paper, optical properties of CuInSe 2 films, deposited by the three-source evaporation technique at a substrate temperature of 670 K, were studied critically to determine the grain boundary scattering effects from the tailing of the absorption edge.
References
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Book
Optical Processes in Semiconductors
TL;DR: Optical processes in semiconductors as mentioned in this paper, Optical Process in Semiconductors (OPP), Optical Process of Semiconductor (OPS) and Optical Process (OPI)
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Optical and electrical properties of SnO2 thin films in relation to their stoichiometric deviation and their crystalline structure
TL;DR: In this paper, the authors show that the importance of any stoichiometric deviation in relation to the production of conductive layers is discussed; the minimum value ϱ min of the resistivity is about 5 × 10 -3 ohms cm.
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Optical properties of ZnTe films
TL;DR: In this article, p-type ZnTe films, deposited by hot-wall vacuum evaporation, were studied extensively in the range of incident photon energy 0.6-2.6 eV.
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Preparation and optical properties of Cd1−xZnxTe films
TL;DR: Optical properties of Cd1−xZnxTe films (0.1 < × < 0.7) were strudied as a function of incident photon energy in this article.