Patent
Binary group III-nitride based high electron mobility transistors
TLDR
In this paper, the binary Group III-nitride high electron mobility transistors (HEMTs) and methods of fabricating binary GIII-NITR HEMTs are provided.Abstract:
Binary Group III-nitride high electron mobility transistors (HEMTs) and methods of fabricating binary Group III-nitride HEMTs are provided. In some embodiments, the binary Group III-nitride HEMTs include a first binary Group III-nitride barrier layer, a binary Group III-nitride channel layer on the first barrier layer; and a second binary Group III-nitride barrier layer on the channel layer. In some embodiments, the binary Group III-nitride HEMTs include a first AIN barrier layer, a GaN channel layer and a second AIN barrier layer.read more
Citations
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Patent
Reverse side engineered iii-nitride devices
TL;DR: In this paper, a group III-nitride devices are described that include a stack of 3-NITR layers, passivation layers, and conductive contacts, including a channel layer with a 2DEG channel, a barrier layer and a spacer layer.
Patent
Enhancement Mode III-N HEMTs
TL;DR: In this article, the concentration of Al in the AlXN layer, the Al XN layer thickness, and the n-doping concentration in the ndoped GaN layer are selected to induce a 2DEG charge in channel access regions without inducing any substantial 2 DEG charge beneath the gate, so that the channel is not conductive in the absence of a switching voltage applied to the gate.
Patent
Semiconductor heterostructure diodes
TL;DR: In this paper, a planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconducting layers are presented.
Patent
Semiconductor devices with field plates
Rongming Chu,Robert Coffie +1 more
TL;DR: In this article, a III-N device is described with a 3-N material layer, an insulator layer on a surface of the 3-n material layer and an etch stop layer on an opposite side of the 2-N layer from the III-n layer.
Patent
High electron mobility heterojunction device
TL;DR: In this paper, a method for providing a periodic table group III nitrides materials based heterojunction device comprising growing all layers therein by molecular beam epitaxy to result having a crystal defects concentration sufficiently small to allow electron mobilities in the sheet charge region to exceed 1100 cm2/volt-second.
References
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Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
30-W/mm GaN HEMTs by field plate optimization
Yifeng Wu,Adam William Saxler,Marcia Moore,R.P. Smith,Scott Sheppard,P. Chavarkar,T. Wisleder,Umesh K. Mishra,P. Parikh +8 more
TL;DR: In this article, a GaN high-electron-mobility-transistors (HEMTs) on SiC were fabricated with field plates of various dimensions for optimum performance, and an enhancement in radio frequency (RF) current-voltage swings was achieved with acceptable compromise in gain, through both reduction in the trapping effect and increase in breakdown voltages.
Patent
Nitride semiconductor device
Shinichi Nagahama,Masayuki Nichia Chemical Industries Ltd. Senoh,Shuji Nichia Chemical Industries Ltd. Nakamura +2 more
TL;DR: In this paper, the super lattice structure of a light emitting device (LED) was proposed to make working current and voltage of the device lower, resulting in realization of more efficient devices.
Patent
Vertical geometry light emitting diode with group iii nitride active layer and extended lifetime
TL;DR: In this article, a light emitting diode (LED) is characterized by an extended lifetime, which consists of a conductive silicon carbide substrate (21), an ohmic contact (22) to the substrate, conductive buffer layer (23), and a double heterostructure (24) including a p-n junction on the buffer layer in which the active (25) and heterostructures layers (26, 27) are selected from the group consisting of binary Group III nitrides and ternary Group III compounds having the formula AxB1-x
Patent
Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
TL;DR: In this article, a transition crystal structure for providing a good lattice and thermal match between a layer of single crystal silicon carbide and a single crystal gallium nitride was disclosed.