Journal ArticleDOI
Broadband High-Power W-Band Amplifier MMICs Based on Stacked-HEMT Unit Cells
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TLDR
In this article, a broadband high-power amplifier (HPA) millimeter-wave integrated circuit (MMIC) covering the extended W-band (65-125 GHz) is reported.Abstract:
This paper reports on a broadband high-power amplifier (HPA) millimeter-wave integrated circuit (MMIC) covering the extended W-band (65–125 GHz). The MMIC is based on the Fraunhofer IAF 50-nm gate-length metamorphic high-electron-mobility transistor (mHEMT) technology. The HPA consists of two parallelized unit amplifiers. Each unit amplifier (UA) utilizes four stacked-HEMT unit power cells (UPCs) and four-way power combiners at the input and output. The UPCs stack four transistors with a gate width of $4\times 40~\mu \text{m}$ per HEMT. The UA achieves an average small-signal gain of 19.4 dB and an average saturated output power of 21.6 dBm at least from 70 to 110 GHz. The HPA yields an average small-signal gain of 16.8 dB and an average saturated output power of 22.5 dBm at least from 68 to 110 GHz. A peak output power of 24.1 dBm is achieved at an operating frequency of 75 GHz.read more
Citations
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Journal ArticleDOI
A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers
TL;DR: This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques, including Si, gallium arsenide (GaAs), GaN, and other III–V materials, and both field-effect and bipolar transistors.
Journal ArticleDOI
Versatile Dual-Receiver 94-GHz FMCW Radar System With High Output Power and 26-GHz Tuning Range for High Distance Applications
Benedikt Welp,Steffen Foss Hansen,Gunnar Briese,Simon Kuppers,Sven Thomas,Christian Bredendiek,Nils Pohl +6 more
TL;DR: The frequency modulated continuous wave (FMCW) radar system presented in this article is capable of achieving this task due to its high output power at 94-GHz center frequency with over 26-GHz tuning range and high system dynamic range and far distance target detection range.
Journal ArticleDOI
Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology
TL;DR: In this article, the authors report on compact solid-state power amplifier (SSPA) millimeter-wave monolithic integrated circuits (MMICs) covering the 280-330 GHz frequency range.
Journal ArticleDOI
Large-Signal Modeling of GaN HEMTs Using Hybrid GA-ANN, PSO-SVR, and GPR-Based Approaches
TL;DR: An extensive study and demonstration of efficient electrothermal large-signal GaN HEMT modeling approaches based on combined techniques of Genetic Algorithm with Artificial Neural Networks (ANN), and Particle Swarm optimization (PSO) with Support Vector Regression (SVR).
Journal ArticleDOI
Full W-Band GaN Power Amplifier MMICs Using a Novel Type of Broadband Radial Stub
Maciej Cwiklinski,Christian Friesicke,Peter Brückner,Dirk Schwantuschke,Sandrine Wagner,Roger Lozar,Hermann Mabler,Rudiger Quay,Oliver Ambacher +8 more
TL;DR: In this article, the first reported full W-band (75-110 GHz) power amplifier (PA) monolithic microwave integrated circuits (MMICs) based on gallium nitride technology were described.
References
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Journal ArticleDOI
Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers
TL;DR: In this paper, stacked field effect transistor (FET) CMOS millimeter-wave power amplfiers (PAs) are studied with a focus on design of appropriate complex impedances between the transistors.
Journal ArticleDOI
A 2-W W-Band GaN Traveling-Wave Amplifier With 25-GHz Bandwidth
TL;DR: These results represent improvements in output power, bandwidth, and gain/power flatness with frequency across the full 75-100-GHz band.
Proceedings ArticleDOI
A wideband high-efficiency 79–97 GHz SiGe linear power amplifier with ≫ 90 mW output
M. Chang,Gabriel M. Rebeiz +1 more
TL;DR: In this article, a fully integrated W-band power amplifier in a commercially-available 0.13 mum silicon germanium technology (max ft = 200 GHz) is presented, which achieves a maximum small-signal gain of 14.5 dB at 86 GHz with a fractional 3dB-bandwidth of 20% (79 to 97 GHz).
Proceedings ArticleDOI
450 GHz amplifier MMIC in 50 nm metamorphic HEMT technology
TL;DR: In this article, a BCB-based planarization process is used for placing a second 450 nm wide gate head on top of a 50 nm e-beam written T-gate.
Proceedings ArticleDOI
Metamorphic 94 GHz power amplifier MMICs
TL;DR: In this article, the authors presented the development of two 94 GHz power amplifier MMICs for use in high-resolution synthetic aperture radar (SAR) systems, which exhibited a small-signal gain of 16 dB and a saturated output power of 20.5 dBm at 94 GHz with a total gate width of 0.72 mm in the output stage.