Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C
Hideki Matsumura,Taro Hayakawa,Tatsunori Ohta,Yuki Nakashima,Motoharu Miyamoto,Trinh Cham Thi,Koichi Koyama,Keisuke Ohdaira +7 more
TLDR
In this paper, the surface potential of c-Si is controlled by the shallow Cat-doping and the surface recombination velocity of minority carriers is greatly reduced by this potential control.Abstract:
Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH3) or diborane (B2H6) with heated tungsten (W) catalyzer. This paper is to investigate systematically this novel doping method, “Cat-doping”, in detail. The electrical properties of P or B doped layers are studied by the Van der Pauw method based on the Hall effects measurement. The profiles of P or B atoms in c-Si are observed by secondary ion mass spectrometry mainly from back side of samples to eliminate knock-on effects. It is confirmed that the surface of p-type c-Si is converted to n-type by P Cat-doping at 80 °C, and similarly, that of n-type c-Si is to p-type by B Cat-doping. The doping depth is as shallow as 5 nm or less and the electrically activated doping concentration is 1018 to 1019 cm-3 for both P and B doping. It is also found that the surface potential of c-Si is controlled by the shallow Cat-doping and that the surface recombination velocity of minority carriers in c-Si can be enormously lowered by this potential control.read more
Citations
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Synthesis and Properties of Plasmonic Boron‐Hyperdoped Silicon Nanoparticles
Parham Rohani,Soham Banerjee,Soroosh Sharifi-Asl,Mohammad Malekzadeh,Reza Shahbazian-Yassar,Simon J. L. Billinge,Simon J. L. Billinge,Mark T. Swihart +7 more
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Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells
TL;DR: This work investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO2, in order to passivate the silicon surface while ensuring a low contact resistivity in transparent passivated contacts.
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Impact of microcrystalline silicon carbide growth using hot-wire chemical vapor deposition on crystalline silicon surface passivation
TL;DR: In this article, a front layer configuration for p-type SHJ solar cells with the μc-SiO x :H layer acting as an etchresistant layer against the reactive deposition conditions during the growth was introduced.
Journal ArticleDOI
Improvement in passivation quality and open-circuit voltage in silicon heterojunction solar cells by the catalytic doping of phosphorus atoms
TL;DR: In this article, an ultrathin n+-layer formed by P Cat-doping acts to improve the effective minority carrier lifetime (?eff) and implied open-circuit voltage (implied Voc).
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Mechanism for crystalline Si surface passivation by the combination of SiO2 tunnel oxide and µc-SiC:H thin film
TL;DR: In this article, a combination of a wet-chemically grown SiO2 tunnel oxide with a highly-doped micro-crystalline silicon carbide layer grown by hot-wire chemical vapor deposition yields an excellent surface passivation for phosphorousdoped crystalline silicon (c-Si) wafers.
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