Journal ArticleDOI
Chemically assisted ion beam etching process for high quality laser mirrors
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TLDR
In this paper, a process for the fabrication of mirror facets for AlGaAs/GaAs laser diodes is described, where the major requirements for high quality mirrors have been fulfilled by using Cl 2 /Ar chemically assisted ion beam etching (CAIBE) and a new multilayer mask structure that produces the smoothest facets.About:
This article is published in Microelectronic Engineering.The article was published on 1989-05-01. It has received 19 citations till now. The article focuses on the topics: Laser & Fabrication.read more
Citations
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Journal ArticleDOI
Full-wafer technology-A new approach to large-scale laser fabrication and integration
Peter Vettiger,Melvin K. Benedict,Gian-Luca Bona,P. Buchmann,E.C. Cahoon,K. Datwyler,H. P. Dietrich,A. Moser,H.K. Seitz,Otto Voegeli,David J. Webb,P. Wolf +11 more
TL;DR: In this paper, a concept for full-wafer processing (FWP) and fullwafer testing (FWT) for semiconductor laser fabrication in the AlGaAs-GaAs material system is presented.
Journal ArticleDOI
Beam properties of AlGaAs power lasers with high-quality etched mirrors
Gian-Luca Bona,P. Buchmann,Rolf Clauberg,H. Jaeckel,Peter Vettiger,Otto Voegeli,David J. Webb +6 more
TL;DR: In this paper, high quality etched mirrors for AlGaAs/GaAs power lasers for applications in optical storage have been fabricated by chemically assisted ion-beam etching (CAIBE).
Journal ArticleDOI
1.3-/spl mu/m GaInAsP/InP buried-ridge-structure laser and its monolithic integration with photodetector using reactive ion beam etching
N. Bouadma,J. Semo +1 more
TL;DR: In this article, a 1.3 /spl mu/m GaInAs/InP BRS laser is monolithically integrated with a photodiode and a packaged pigtailed integrated LD-PD is realized, in which the signal emitted from the rear laser facet is detected by the integrated photodiodes and used to stabilize the laser output power, through a hybrid feedback circuit, to within 0.1% over 55/spl deg/C temperature range.
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Laser operation‐induced migration of beryllium at mirrors of GaAs/AlGaAs laser diodes
TL;DR: In this article, a single quantum well graded index separate confinement GaAs/AlGaAs ridge geometry laser diodes were used to measure the diffusion coefficient of beryllium and estimated the average mirror temperature during laser operation.
Journal ArticleDOI
High-power laser diodes with dry-etched mirror facets and integrated monitor photodiodes
TL;DR: In this article, a multilayer resist system has been employed as a mask for the chemically assisted ion-beam etching (CAIBE) process resulting in vertical and smooth laser facets.
References
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Journal ArticleDOI
High-power ridge-waveguide AlGaAs GRIN-SCH laser diode
TL;DR: AlGaAs ridge single-quantum-well graded-index separate confinement heterostructure (SQW GRIN-SCH) with typical threshold currents of 9 mA and differential quantum efficiencies between 80% and 85% for 0.4 mm-long cavities have been fabricated with molecular beam epitaxy.
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The thermal and ion-assisted reactions of GaAs(100) with molecular chlorine
TL;DR: In this paper, the reaction of single-crystal GaAs with molecular chlorine with and without simultaneous bombardment by energetic argon ions was studied with an in situ mass spectrometer; reflected chlorine and reaction product signals were measured as functions of crystal temperature.
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Large area ion beam assisted etching of GaAs with high etch rates and controlled anisotropy
TL;DR: In this paper, an improved ion beam assisted etching (IBAE) system was proposed to achieve anisotropic etching of GaAs with minimal surface damage over areas of a few square millimeters.
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Nonselective etching of GaAs/AlGaAs double heterostructure laser facets by Cl2 reactive ion etching in a load‐locked system
TL;DR: In this article, a load-locked reactive ion etching system was developed to dramatically reduce the background partial pressure of O2 and H2O in the chamber, permitting equal rate etching of GaAs and AlGaAs with smooth vertical facets.
Journal ArticleDOI
Chemically enhanced focused ion beam etching of deep grooves and laser‐mirror facets in GaAs under Cl2 gas irradiation using a fine nozzle
N. Takado,Kiyoshi Asakawa,Tonao Yuasa,Sumio Sugata,Eizo Miyauchi,Hisao Hashimoto,Makoto Ishii +6 more
TL;DR: In this article, a focused ion beam etching (FIBE) system was used for maskless GaAs maskless etching with an air-locked ultrahigh vacuum chamber, a 30 keV Ga+ FIB column and a fine nozzle.