Journal ArticleDOI
Compact DC-60-GHz HJFET MMIC switches using ohmic electrode-sharing technology
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TLDR
In this article, a novel ohmic electrode sharing technology (OEST) has been developed for MMIC switches with series-shunt FET configuration for millimeter-wave communications and radar systems.Abstract:
Compact DC-60-GHz heterojunction field-effect transistor (HJFET) monolithic-microwave integrated-circuit (MMIC) switches have been demonstrated for millimeter-wave communications and radar systems To reduce the MMIC chip size, a novel ohmic electrode-sharing technology (OEST) has been developed for MMIC switches with series-shunt FET configuration Four FET's of the series-shunt single-pole double-throw (SPDT) MMIC switch were integrated into an area of approximately 0018 mm/sup 2/ The developed MMIC switches have a high power-handling capability with low insertion loss (IL) and high isolation (Iso) at millimeter-wave frequencies From DC to 60 GHz, the single-pole single-throw (SPST) MMIC switch achieved the IL and Iso of better than 164 and 206 dB, respectively At 40 GHz, the IL increases by 1 dB at the input power of 21 dBm A novel large-signal FET model for the switch circuit is presented The simulated power-transfer performance shows the excellent agreement with the measured one The developed MMIC switches will contribute to the low-cost and high-performance millimeter-wave communications and radar systemsread more
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Switch Circuit and Method of Switching Radio Frequency Signals
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TL;DR: In this paper, a fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements, which includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.
Journal ArticleDOI
Design and analysis for a miniature CMOS SPDT switch using body-floating technique to improve power performance
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TL;DR: In this article, a method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) was described, which can be adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFs, thereby yielding improvements in FET performance.
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Method and Apparatus Improving Gate Oxide Reliability by Controlling Accumulated Charge
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TL;DR: In this article, a method and apparatus for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques is presented.
References
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Journal ArticleDOI
DC-40 GHz and 20-40 GHz MMIC SPDT Switches
M.J. Schindler,A.M. Morris +1 more
TL;DR: In this paper, DC to 40 GHz and 20-40 GHz monolithic GaAs SPDT switches have been demonstrated and measured power handling performance and switching speed data are also presented.
Journal ArticleDOI
High-speed, 100+W RF switches using GaAs MMICs
TL;DR: In this paper, a low-loss, inductive gate bias network structure for high-power RF switching applications is described, and the design, implementation, and performance of S and C-band SPDT switches based on this structure are described.
Journal ArticleDOI
W-band SPST transistor switches
TL;DR: In this paper, a single-pole, single-throw (SPST) transistor switch has been developed, and three types of switches, that is, GaAs MESFET, AlGaAs-GaAs HEMT, and Pseudo-HEMT (PM) have been fabricated, and the performances at W-band are compared.
Proceedings ArticleDOI
A high performance V-band monolithic FET transmit-receive switch
TL;DR: In this article, a monolithic V-band GaAs FET transmit-receive switch is described, and the insertion loss for the switch-on path is less than 1.5 dB across a 2 GHz bandwidth (59 to 61 GHz) and less than 3.2 dB across an 8-GHz bandwidth (56 to 64 GHz).
Proceedings ArticleDOI
A high power K/Ka-band monolithic T/R switch
TL;DR: In this paper, a high-power K/Ka-band MESFET switch monolithic microwave integrated circuit (MMIC) has been developed for use in transmit/receive (T/R) modules.