Open AccessJournal Article
Competition between Metallic and Vacancy Defect Conductive Filaments in a CH3NH3PbI3-Based Memory Device C
Yiming Sun,Meiqian Tai,Cheng Song,Ziyu Wang,Jun Yin,Fan Li,Huaqiang Wu,Zeng Fei,Hong Lin,Feng Pan +9 more
TLDR
In this article, the competition between metallic and vacancy defect conductive filaments (CFs) was investigated in a resistive random access memory (RNA) cell with the top electrode and memory medium.Abstract:
Ion migration, which can be classified into cation migration and anion migration, is at the heart of redox-based resistive random access memory. However, the coexistence of these two types of ion migration and the resultant conductive filaments (CFs) have not been experimentally demonstrated in a single memory cell. Here we investigate the competition between metallic and vacancy defect CFs in a Ag/CH₃NH₃PbI₃/Pt structure, where Ag and CH₃NH₃PbI₃ serve as the top electrode and memory medium, respectively. When the medium layer thickness is hundreds of nanometers, the formation/diffusion of iodine vacancy (VI) CFs dominates the resistive switching behaviors. The VI-based CFs provide a unique opportunity for the electrical-write and optical-erase operation in a memory cell. The Ag CFs emerge and coexist with VI ones as the medium layer thickness is reduced to ∼90 nm. Our work not only enriches the mechanisms of the resistive switching but also would advance the multifunctionalization of resistive random access memory.read more
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Journal ArticleDOI
A Solution‐Processed All‐Perovskite Memory with Dual‐Band Light Response and Tri‐Mode Operation
Xinwei Guan,Tao Wan,Long Hu,Chun-Ho Lin,Jialin Yang,Jingbo Huang,Chien-Yu Huang,Shamim Shahrokhi,Adnan Younis,Kavitha Ramadass,Kewei Liu,Ajayan Vinu,Jiabao Yi,Dewei Chu,Tom Wu +14 more
TL;DR: In this paper , a photonic resistive switching (RS) memory is demonstrated based on solution-processed bilayers of strontium titanate (SrTiO3 or STO) quantum dots (QDs) and all-inorganic halide perovskite CsPbBr3 (CPB) with an Ag/STO/CPB/Au architecture.
Journal ArticleDOI
Low-Dimensional Metal-Halide Perovskites as High-Performance Materials for Memory Applications.
Xinwei Guan,Zhihao Lei,Xuechao Yu,Chun-Ho Lin,Jingbo Huang,Chien-Yu Huang,Long Hu,Feng Li,Ajayan Vinu,Jiabao Yi,Tom Wu +10 more
TL;DR: In this article , the mechanisms, properties, as well as stability and performance of low-dimensional perovskite memories, involving both molecular-level and structure-level nanostructures, are comprehensively reviewed.
Dissertation
On the Development of Memsensors
TL;DR: A nanoparticle-based memristive device with diffusive Memristive switching characteristics was developed and characterised in detail and sensors relying on semiconducting metal oxide thin films and nanostructures were thoroughly studied, showcasing the particular eligibility of memsensors in the context of neuromorphic engineering.
Journal ArticleDOI
Emerging New‐Generation Detecting and Sensing of Metal Halide Perovskites
Hui Bu,Caili He,Yanqing Xu,Lu Xing,Xiaomin Liu,Shuxia Ren,Sheng Yao Yi,Liquan Chen,Hao Wu,Guangbiao Zhang,Jinjin Zhao,Jianlin Shi +11 more
TL;DR: The unique energy conversion characteristics of metal halide perovskite (MHP) materials have boosted their promising application in detecting and sensing devices, in addition to their famous optoelectronic functions as mentioned in this paper .
Journal ArticleDOI
Metal Halide Perovskite/Electrode Contacts in Charge‐Transporting‐Layer‐Free Devices
TL;DR: In this paper , the role of metal halide perovskite/electrode contacts on device performance is summarized and discussed, and the current challenges are analyzed, and appropriate recommendations are put forward.
References
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Recent Advances in Memristive Materials for Artificial Synapses
TL;DR: The most recent developments in memristor‐based artificial synapses are introduced with their excellent synaptic behaviors accompanied with detailed explanation of their working mechanisms to be a guide to rational materials design for the artificial synapse of neuromorphic computing.
Journal ArticleDOI
Recent Advances in Memory Devices with Hybrid Materials
Bohee Hwang,Jang-Sik Lee +1 more
Journal ArticleDOI
All-Inorganic Bismuth Halide Perovskite-Like Materials A3Bi2I9 and A3Bi1.8Na0.2I8.6 (A = Rb and Cs) for Low-Voltage Switching Resistive Memory
TL;DR: Lead-free Au/A3Bi2I9/Pt/Ti/SiO2/Si (A is either Cs+ or Rb+) devices and tested their resistive switching characteristics showed a forming step prior to repeating switching, low operating voltage, large on/off ratio, relatively high endurance, and high retention.