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Proceedings ArticleDOI

Concept and system analysis of wideband transmit front-ends for high data rate communication systems at W-band

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TLDR
The requirements to achieve data rates beyond 100 Gbit/s in communication systems operating at W-band are presented and a link budget analysis shows the feasibility of the concept for multi-user short-range line-of-sight communications.
Abstract
This paper presents the requirements to achieve data rates beyond 100 Gbit/s in communication systems operating at W-band. The analysis assumes the underlying transmitter system to be implemented as an active antenna array which supports beam steering and polarization multiplexing over large bandwidths to achieve the high data rates. The envisaged technologies for the transceiver front-ends are CMOS for the active circuitry and a stereolithographic process for the integration of the chip sets into active antenna elements. Application scenarios are presented, and a link budget analysis shows the feasibility of the concept for multi-user short-range line-of-sight communications. The required beam steering angles and ranges of operation are taken into account together with the necessary signal-to-noise ratio and modulation order to obtain the minimum number of array elements. Lastly, the frequency dependence of the link budget shows that the performance is limited at the lower W-band. Efforts for performance improvement should thus target this frequency range.

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Citations
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Proceedings ArticleDOI

Compact wideband single-ended and differential microstrip-to-waveguide transitions at W-band

TL;DR: In this article, two W-band inline transitions between microstrip line and rectangular waveguide are presented, based on antipodal finlines and Vivaldi-like antennas on an ultrathin liquid crystal polymer substrate inserted in a WR10 waveguide.
Proceedings ArticleDOI

A wideband differential microstrip-to-waveguide transition at W-band

TL;DR: In this article, a W-band inline transition between differential microstrip lines and a rectangular waveguide is presented, based on finlines on an ultrathin liquid crystal polymer substrate inserted in a WR10-waveguide.
Journal ArticleDOI

Dual-Polarized Antenna Arrays with CMOS Power Amplifiers for SiP Integration at W-Band

TL;DR: In this paper, the authors present requirements and front-end solutions for low-cost communication systems with data rates of 100 Gbit/s, and link budget analyses in different mass-market applications are conducted for that purpose.
References
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W-Band CMOS Amplifiers Achieving $+$ 10 dBm Saturated Output Power and 7.5 dB NF

TL;DR: The measured results suggest that the slow-wave shielding of the passives is useful in achieving high performance and high frequency of operation and as the substrate losses are minimal the modeling becomes more accurate.
Journal ArticleDOI

Flip-Chip-Assembled $W$ -Band CMOS Chip Modules on Ceramic Integrated Passive Device With Transition Compensation for Millimeter-Wave System-in-Package Integration

TL;DR: In this article, a flip-chip-assembled CMOS chip set with transition compensation is presented, where a three-stage amplifier, a balanced amplifier, and a down-converted Gilbert-cell subharmonic mixer are included in the chip set.
Proceedings ArticleDOI

A W-band power amplifier in 65-nm CMOS with 27GHz bandwidth and 14.8dBm saturated output power

TL;DR: This W-band power amplifier in 65-nm CMOS technology is presented, with state-of-the-art output power performance, and a miniature size, and demonstrated widest bandwidth among the reported CMOS PA in this frequency regime.
Proceedings ArticleDOI

A 75.5-to-120.5-GHz, high-gain CMOS low-noise amplifier

TL;DR: In this paper, a high-gain and wideband low-noise amplifier using 65-nm CMOS process is proposed, where a four-stage cascode configuration is adopted to achieve the high gain and wide band performance.
Proceedings ArticleDOI

A W-band current combined power amplifier with 14.8dBm P sat and 9.4% maximum PAE in 65nm CMOS

TL;DR: In this article, a two-way current power combiner is employed to combine the power from two separate PAs, which achieves up to 14.8dBm saturated output power with over 14dB power gain.
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