Conduction‐ and valence‐band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition
TLDR
In this article, the conduction and valence-band offsets for GaAs/Ga0.51In0.49P quantum wells were independently estimated by measuring the capacitance transient resulting from thermal emission of carriers from the respective wells.Abstract:
We have independently estimated the conduction‐ and valence‐band offsets ΔEc and ΔEv in GaAs/Ga0.51In0.49P quantum wells by measuring the capacitance transient resulting from thermal emission of carriers from the respective wells. The heterostructure samples were grown by low‐pressure metalorganic chemical vapor deposition. The band offsets are extrapolated from the emission activation energies with appropriate corrections. The estimated values of ΔEc and ΔEv are 0.198 and 0.285 eV, respectively.read more
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Determination of valence and conduction‐band discontinuities at the (Ga,In) P/GaAs heterojunction by C‐V profiling
TL;DR: In this paper, the valence and conduction band discontinuities for the lattice matched (Ga,In)P/GaAs heterojunction have been determined by capacitance-voltage (C‐V) profiling.
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Interface properties for GaAs/InGaAlP heterojunctions by the capacitance‐voltage profiling technique
Miyoko O. Watanabe,Yasuo Ohba +1 more
TL;DR: In this paper, the conduction-band discontinuity ΔEc and interface charge density σ have been studied for GaAs/In0.5Al 0.5P/ In0. 5Ga0.
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Conduction-band offsets in pseudomorphic In x Ga 1-x As/Al 0.2 Ga 0.8 As quantum wells (0.07<=x<=0.18) measured by deep-level transient spectroscopy
TL;DR: The results support recent theoretical calculations from which a monotonic increase in \ensuremath{\Delta}${E}_{c}$ with strain in this heterostructure system is predicted.
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Extremely high electron mobility in a GaAs‐GaxIn1−xP heterostructure grown by metalorganic chemical vapor deposition
TL;DR: In this paper, the magnetoresistivity of GaAs•GaInP heterostructures grown by low pressure metalorganic chemical vapor deposition in magnetic fields up to 12 T and at liquidhelium temperatures was studied.