Journal ArticleDOI
Electric-pulse-induced reversible resistance change effect in magnetoresistive films
S. Q. Liu,N. J. Wu,Alex Ignatiev +2 more
TLDR
A large electric-pulse-induced reversible resistance change active at room temperature and under zero magnetic field has been discovered in colossal magnetoresistive (CMR) Pr0.7Ca0.3MnO3 thin films.Abstract:
A large electric-pulse-induced reversible resistance change active at room temperature and under zero magnetic field has been discovered in colossal magnetoresistive (CMR) Pr0.7Ca0.3MnO3 thin films. Electric field-direction-dependent resistance changes of more than 1700% were observed under applied pulses of ∼100 ns duration and as low as ±5 V magnitude. The resistance changes were cumulative with pulse number, were reversible and nonvolatile. This electrically induced effect, observed in CMR materials at room temperature has both the benefit of a discovery in materials properties and the promise of applications for thin film manganites in the electronics arena including high-density nonvolatile memory.read more
Citations
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Journal ArticleDOI
Memristive devices for computing
TL;DR: The performance requirements for computing with memristive devices are examined and how the outstanding challenges could be met are examined.
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Journal ArticleDOI
Resistive switching in transition metal oxides
TL;DR: In this paper, the authors review the current status of one of the alternatives, resistance random access memory (ReRAM), which uses a resistive switching phenomenon found in transition metal oxides.
Journal ArticleDOI
Complexity in Strongly Correlated Electronic Systems
TL;DR: The spontaneous emergence of electronic nanometer-scale structures in transition metal oxides, and the existence of many competing states, are properties often associated with complex matter where nonlinearities dominate, such as soft materials and biological systems.
Journal ArticleDOI
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
TL;DR: It is demonstrated that the switching behaviour is an intrinsic feature of naturally occurring dislocations in single crystals of a prototypical ternary oxide, SrTiO3, and to be related to the self-doping capability of the early transition metal oxides.
References
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Journal ArticleDOI
Thousandfold Change in Resistivity in Magnetoresistive La-Ca-Mn-O Films
TL;DR: A negative isotropic magnetoresistance effect has been observed in thin oxide films of perovskite-like La0.67Ca0.33MnOx, which could be useful for various magnetic and electric device applications if the observed effects of material processing are optimized.
Journal ArticleDOI
Current switching of resistive states in magnetoresistive manganites
TL;DR: In this paper, it was shown that the switching of resistive states in manganites can be achieved not only by a magnetic field, but also by an electric field for manganite oxides of the form Pr1−xCaxMnO3.
Journal ArticleDOI
Lattice effects in magnetoresistive manganese perovskites
TL;DR: The discovery of magnetoresistive responses in a class of metallic manganese oxides has raised hopes that these compounds might be of practical utility as mentioned in this paper. But regardless of whether this promise is realized, these materials provide an ideal system in which to elucidate the properties of metals in which electron-lattice interactions play a key role.
Journal ArticleDOI
Evidence for magnetic polarons in the magnetoresistive perovskites
J. M. De Teresa,M. R. Ibarra,Pedro A. Algarabel,Clemens Ritter,Clara Marquina,Javier Blasco,Jose H. Garcia,A. del Moral,Z. Arnold +8 more
TL;DR: In this article, a combination of volume thermal expansion (with and without an applied field), magnetic susceptibility and small-angle neutron scattering measurements was used to detect magnetic polarons above the ferromagnetic ordering temperature, Tc.
Journal ArticleDOI
Magnetic-field-induced metal-insulator phenomena in Pr1-xCaxMnO3 with controlled charge-ordering instability
TL;DR: Field-induced insulator-to-metal transitions have been found in single crystals, which are accompanied by a melting of the insulating charge-ordered state, which is argued in terms of the effect of discommensuration of the charge concentration on the charge-ordering state.