Journal ArticleDOI
Depolarization fields in thin ferroelectric films
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TLDR
In this article, a mechanism was proposed to explain depolarization phenomena in thin ferroelectric films and related multilayer devices, where the center of gravity of this charge and the free compensation charge are not coincident.Abstract:
A mechanism is proposed to explain depolarization phenomena that have been observed in thin ferroelectric films and related multilayer devices. It is shown that, for a short‐circuited electrode‐ferroelectric structure, incomplete compensation of the ferroelectric polarization charge results when the center of gravity of this charge and the free compensation charge are not coincident. Depolarization fields in the ferroelectric arising from such incomplete compensations are estimated. A simple switching calculation shows such fields to be of sufficient strength to account for the initial polarization decay rate observed in Pb0.92Bi0.07La0.01 (Fe0.405Nb0.325Zr0.27)O3 films. The results of measurements involving changes in film thickness, electron concentration in the electrodes, and contact materials will be discussed and shown to be consistent with the mechanism proposed.read more
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Ferroelectric thin films: Review of materials, properties, and applications
Nava Setter,Dragan Damjanovic,L. Eng,Glen R. Fox,Spartak Gevorgian,Seungbum Hong,Angus I. Kingon,Hermann Kohlstedt,N. Y. Park,G. B. Stephenson,I. Stolitchnov,A. K. Taganstev,D. V. Taylor,Tomoaki Yamada,Stephen K. Streiffer +14 more
TL;DR: An overview of the state of the art in ferroelectric thin films is presented in this paper, where the authors review applications: micro-systems' applications, applications in high frequency electronics, and memories based on Ferroelectric materials.
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Critical thickness for ferroelectricity in perovskite ultrathin films
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Interface Physics in Complex Oxide Heterostructures
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Bulk Photovoltaic Effect at Visible Wavelength in Epitaxial Ferroelectric BiFeO3 Thin Films
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References
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Space-Charge Effects on Electron Tunneling
D. J. BenDaniel,C. B. Duke +1 more
TL;DR: In this article, the one-electron (Bethe-Sommerfeld) model of electron tunneling is formulated to describe tunneling when the curvature (electron mass and centroid of the oneelectron constant energy surfaces vary across the junction.
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Characteristics of the Surface‐State Charge (Qss) of Thermally Oxidized Silicon
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Surface Properties of II-VI Compounds
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