Journal ArticleDOI
Deposition of device quality, low H content amorphous silicon
TLDR
In this paper, it was shown that hydrogenated amorphous silicon containing as little as 1/10 the bonded H observed in device-quality glow discharge films have been deposited by thermal decomposition of silane on a heated filament.Abstract:
Device‐quality hydrogenated amorphous silicon containing as little as 1/10 the bonded H observed in device‐quality glow discharge films have been deposited by thermal decomposition of silane on a heated filament. These low H content films show an Urbach edge width of 50 mV and a spin density of ∼1/100 as large as that of glow discharge films containing comparable amounts of H. High substrate temperatures, deposition in a high flux of atomic H, and lack of energetic particle bombardment are suggested as reasons for this behavior.read more
Citations
More filters
Journal ArticleDOI
Solar Photovoltaics R&D at the Tipping Point: A 2005 Technology Overview
TL;DR: The status of current and coming solar photovoltaic technologies and their future development are presented in this paper, where the emphasis is on R&D advances and cell and module performances, with indications of the limitations and strengths of crystalline (Si and GaAs) and thin film (a-Si:H, Si, Cu(In,Ga)(Se,S)2, CdTe).
Journal ArticleDOI
Photovoltaics: A review of cell and module technologies
TL;DR: In this paper, the status, and future directions of the cell and module technologies, with emphasis on the research and development aspects, are discussed, including issues that are considered important for the development of specific materials, cell, and module approaches.
Journal ArticleDOI
Direct detection of H atoms in the catalytic chemical vapor deposition of the SiH4/H2 system
Hironobu Umemoto,Kentaro Ohara,Daisuke Morita,Yoshitaka Nozaki,Atsushi Masuda,Hideki Matsumura +5 more
TL;DR: In this paper, the absolute densities of H atoms produced in catalytic chemical vapor deposition (Cat-CVD or hot-wire CVD) processes were determined by employing two-photon laser-induced fluorescence and vacuum ultraviolet absorption techniques.
Journal ArticleDOI
Development in Understanding and Controlling the Staebler-Wronski Effect in a-Si:H
TL;DR: In this paper, the Staebler-Wronski effect is associated with the relatively high diffusion coefficient of hydrogen and the changes in local bonding coordination promoted by hydrogen, and the fundamental aspects of the interplay between hydrogen and electronic energy states that form the basis of competing microscopic models for explaining the degradation effect.
Journal ArticleDOI
Semiconductor solar cells: Recent progress in terrestrial applications
TL;DR: In this article, the authors discuss the progress, outstanding problems, and environmental issues associated with bulk Si, thin-film, and high-efficiency multi-junction solar cells, which form the basis of the so-called third generation photovoltaics technologies.
References
More filters
Journal ArticleDOI
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study.
TL;DR: In this article, the authors investigated the influence of the Staebler-Wronski effect on undoped hydrogenated amorphous silicon with electron spin resonance and photoconductivity measurements.
Journal ArticleDOI
Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon
TL;DR: The effect of thermal and structural disorder on the electronic structure of hydrogenated amorphous silicon is investigated by measurement of the shape of the optical absorption edge as a function of temperature and thermal evolution of hydrogen as discussed by the authors.
Journal ArticleDOI
The defect density in amorphous silicon
TL;DR: The correlation between dangling-bond defect density and the slope of the Urbach tail in hydrogenated amorphous silicon is examined in this article, and it is shown that this correlation can be explained quantitatively by a spontaneous decay of the weakest bonding orbitals into non-bonding defects during deposition or annealing of a sample and that the same correlation holds for all types of disorder affecting the edge of the urbach edge.
Journal ArticleDOI
Production of high-quality amorphous silicon films by evaporative silane surface decomposition
TL;DR: In this paper, a simplified model for the deposition process is suggested based on this data and other information, and a novel substrate holder is used to control the growth of a•Si:H growth on nearby substrates.