Journal ArticleDOI
Depth resolution factor of a static gaussian ion beam
TLDR
In this article, the dependence of the depth resolution on the contribution of a Gaussian crater shape and the finite width of the Gaussian excitation beam was considered for Auger electron spectroscopy depth profiling.Abstract:
The dependence of the depth resolution on the contribution of a Gaussian crater shape and the finite width of a Gaussian excitation beam (and/or Gaussian acceptance function) is considered. The results show that for Auger electron spectroscopy depth profiling, the contribution of the beam shapes to the depth resolution can, in most cases, be neglected. With X-ray photoelectron spectroscopy and secondary ion mass spectroscopy depth profiling, care has to be taken to obtain a well resolved depth profile.read more
Citations
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Journal ArticleDOI
Sputter depth profile analysis of interfaces
TL;DR: In this paper, a brief survey of the technique of sputter depth profiling is given, along with some introductory remarks about aims and scope, historical background and present state of the art, and a summary of optimized experimental conditions for high-resolution depth profiles highlights the use of sample rotation and of low energy primary ions.
Journal ArticleDOI
Characterization of a high depth-resolution tantalum pentoxide sputter profiling reference material
C. P. Hunt,Martin P. Seah +1 more
TL;DR: In this paper, the effects of argon ion beam energy, electron beam current density, sputtering geometry and gas purity effects on etch rate and interface width are measured and interpreted in terms of basic parameters, showing that the material is a wellbehaved model system that is robust and easily used.
Journal ArticleDOI
Compositional depth profiling by sputtering
TL;DR: A summary of the principles of quantitative depth profiling by sputtering in combination with surface analysis methods such as AES, XPS, SIMS and ISS is presented with emphasis on recent advances in improving the depth resolution towards its physical limits as mentioned in this paper.
Journal ArticleDOI
The depth dependence of the depth resolution in composition–depth profiling with Auger Electron Spectroscopy
Martin P. Seah,C. P. Hunt +1 more
TL;DR: In this paper, the depth dependence of the depth resolution in composition-depth profiles using Auger electron spectroscopy is briefly appraised to emphasize some of the different mechanisms operating for different classes of material and to show how the use of a characterized Ta2O5 on Ta reference material can help to optimize depth resolution.
Journal ArticleDOI
A comparative study of methods for thin-film and surface analysis
H W Werner,R P H Garten +1 more
TL;DR: In this article, a number of features characteristic of different thin-film analytical methods are reviewed and evaluated, and the principles, approach for quantification and prominent problems of the most commonly used methods (ESCA, AES, SIMS, LEIS, RBS and NRA) are discussed.
References
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Journal ArticleDOI
The depth resolution of sputter profiling
TL;DR: In this article, it is shown that the bulk radiation damage accompanying sputtering events sets ultimate limits to the depth resolution attainable in sputter profiling, and guidelines for selection of projectile species and energies to minimize such mixing are given and numerical estimates for attainable depth resolutions.
Journal ArticleDOI
Secondary ion quadrupole mass spectrometer for depth profiling--design and performance evaluation.
TL;DR: A quadrupole-based secondary ion mass spectrometer designed for depth profiling is described which combines ultrahigh vacuum construction with high sputtering rate, detection sensitivity, depth resolution, mass spectral purity, and abundance sensitivity.
Journal ArticleDOI
Theoretical and experimental aspects of secondary ion mass spectrometry
TL;DR: Secondary ion mass spectrometry (SIMS) can be used to investigate the composition of solids in the following way: by means of an ion bombardment (energy 3-15 keV) the sample is sputtered away.
Journal ArticleDOI
Deconvolution method for composition profiling by Auger sputtering technique
Paul S. Ho,J. E. Lewis +1 more
TL;DR: In this article, a deconvolution method has been developed to facilitate the retrieval of the actual profile from the observed profile by reducing the sputter broadening effect, which can be separated into contributions from original surface roughness and sputtering effects.
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Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solids
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