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Journal ArticleDOI

Design and development of a CPW-based 5-bit switched-line phase shifter using inline metal contact MEMS series switches for 17.25 GHz transmit/receive module application

Sukomal Dey, +1 more
- 01 Jan 2014 - 
- Vol. 24, Iss: 1, pp 015005
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TLDR
In this paper, a radio frequency microelectro-mechanical system (RF-MEMS) phase shifter based on switchable delay line concept with maximum desirable phase shift and good reliability is presented.
Abstract
A radio frequency micro-electro-mechanical system (RF-MEMS) phase shifter based on switchable delay line concept with maximum desirable phase shift and good reliability is presented in this paper. The phase shifter is based on the switchable reference and delay line configurations with inline metal contact series switches that employs MEMS systems based on electrostatic actuation and implemented using coplanar waveguide (CPW) configuration. Electromechanical behaviour of the MEMS switch has been extensively investigated using commercially available simulation tools and validated using system level simulation. A detailed design and performance analysis of the phase shifter has been carried out as a function of various structural parameters with reference to the gold-based surface micromachining process on alumina substrate. The mechanical, electrical, transient, intermodulation distortion (IMD) and loss performance of an MEMS switch have been experimentally investigated. The individual primary phase-bits (11.25°/22.5°/45°/90°/180°) that are fundamental building blocks of a complete 5-bit phase shifter have been designed, fabricated and experimentally characterized. Furthermore, two different 5-bit switched-line phase shifters, that lead to 25% size reduction and result in marked improvement in the reliability of the complete 5-bit phase shifter with 30 V actuation voltage, have been developed. The performance comparison between two different CPW-based switched-line phase shifters have been extensively investigated and validated. The complete 5-bit phase shifter demonstrates an average insertion loss of 5.4 dB with a return loss of better than 14 dB at 17.25 GHz. The maximum phase error of 1.3° has been obtained at 17.25 GHz from these 5-bit phase shifters.

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Citations
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Journal ArticleDOI

Reliability Analysis of Ku-Band 5-bit Phase Shifters Using MEMS SP4T and SPDT Switches

TL;DR: In this article, a Ku-band microelectromechanical systems (MEMS) based 5-bit phase shifter using dc contact single-pole-four-throw (SP4T) and single-single-double-throw switches is presented.
Journal ArticleDOI

Reliable and Compact 3- and 4-Bit Phase Shifters Using MEMS SP4T and SP8T Switches

TL;DR: In this paper, a 3-and 4-bit phase shifter with single-pole-four-throw (SP4T) and singlepole-eight-thigh (SP8T) switches is presented.
Journal ArticleDOI

Design and development of miniaturized low voltage triangular RF MEMS switch for phased array application

TL;DR: In this article, a metal-to-metal contact based miniaturized low voltage triangular MEMS switch with improved characteristics such as low actuation voltage, high isolation, low insertion loss, low stress factor, and good return loss is presented.
Journal ArticleDOI

$K$ -Band 4-Bit Phase Shifter Using Two Back to Back MEMS SP16T Switching Networks

TL;DR: In this paper, the authors presented a $K$ -band 4-bit phase shifter using micro-electromechanical system-based dc contact single-pole-sixteen-throw (SP16T) switching networks.
References
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Book

Microwave Engineering

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TL;DR: In this paper, the fundamental nature of the internal stresses that are found in both evaporated and sputtered coatings is reviewed from the point of view of decorative coating applications, which indicate that apparatus geometry is particularly important in determining the state of stress that forms in deposits.
Journal ArticleDOI

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TL;DR: In this paper, the authors concentrate on electrostatic switches at 0.1-100 GHz with high reliability (100 million to 10 billion cycles) and wafer-scale manufacturing techniques.
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Stress‐related problems in silicon technology

TL;DR: In this paper, the authors review the achievements to date in understanding and modeling diverse stress problems in silicon integrated circuits, including CVD (chemical vapor deposition) silicon nitride, silicon dioxide, polycrystalline silicon, etc.
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