Journal ArticleDOI
Stress‐related problems in silicon technology
TLDR
In this paper, the authors review the achievements to date in understanding and modeling diverse stress problems in silicon integrated circuits, including CVD (chemical vapor deposition) silicon nitride, silicon dioxide, polycrystalline silicon, etc.Citations
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Journal ArticleDOI
Oxygen precipitation in silicon
TL;DR: A review of the recent advances in the study of oxygen precipitation and of the main properties of oxide precipitates in silicon is presented in this article, where the most important techniques for the characterization of the precipitates are illustrated together with the most interesting and recent results.
Journal ArticleDOI
Silicides and ohmic contacts
Jeffrey P. Gambino,E.G. Colgan +1 more
TL;DR: An overview of the scientific and technological aspects of silicides and ohmic contacts, including the electrical properties of metal-Si contacts, metal and silicide deposition techniques, metal reactions, silicide patterning processes, and device degradation due to silicides, is given in this article.
Journal ArticleDOI
Metal silicides in CMOS technology : Past, present, and future trends
Shi-Li Zhang,Mikael Östling +1 more
TL;DR: The metal silicides have played an indispensable role in the rapid development of microelectronics since PtSi was first used to improve the rectifying characteristics of diodes in early 1960s as discussed by the authors.
Patent
Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
TL;DR: In this article, the authors describe a method for fabricating FETs with impurity-free regions of the strained material layers of the semiconductor, where the impurities are kept free of impurities that can interdiffuse from adjacent portions of the FET.
Journal ArticleDOI
Modeling of Elastic Deformation of Multilayers Due to Residual Stresses and External Bending
TL;DR: In this paper, a general closed-form solution for elastic deformation of multilayers due to residual stresses and external bending is derived based on the general solution, and simplified solutions for residual stress distributions in multiple layers of thin films on a thick substrate are obtained.