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Journal ArticleDOI

Dielectric-loaded self-resonant LSA diode

Daniel L. Rode
- 01 Jan 1970 - 
- Vol. 17, Iss: 1, pp 47-52
TLDR
In this paper, the self-resonance of a cylindrical LSA diode loaded externally by a concentric dielectric ring is exploited to achieve a design consistent with heat dissipation requirements for CW operation at frequencies in excess of 70 GHz.
Abstract
The realization of the predicted dc to RF conversion efficiency of LSA oscillators operating around 100 GHz is expected to require low-loss resonant circuits. At these higher frequencies, the practical difficulties attendant upon the construction of conventional waveguide elements suggest that a more compact resonant circuit may be useful. The resonator studied theoretically in the present paper takes advantage of the self-resonance of a cylindrical LSA diode loaded externally by a concentric dielectric ring. By this means, a design consistent with heat dissipation requirements for CW operation is reached for frequencies in excess of 70 GHz.

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Microwave oscillator integrated in a waveguide

TL;DR: A negative-resistance diode oscillator tuned by a varactor as applicable to frequency-modulated transmitters or to receiver oscillators operating within the 56-100 GHz frequency band is integrated in a waveguide as mentioned in this paper.
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A theory of multiple modes in avalanche diodes

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TL;DR: In this article, a multidimensional, dynamic analysis of solid state avalanche diodes is presented, where well-established electromagnetic concepts are applied to a widely used model of the diode and reveal a discrete spectrum of new small signal modes.
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A Low-Inductance Millimeter-Wave Semiconductor Package (Correspondence)

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Axial Electromagnetic Modes and Self‐Resonance in LSA Diodes

TL;DR: In this paper, a cylindrical diode oscillator with a self-resonance condition is described, where the electric field amplitude is uniform to within 16% over the cross section of the selfresonant diode.
References
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Journal ArticleDOI

LSA Oscillator‐Diode Theory

TL;DR: In this paper, the capacity of n-GaAs was investigated in the limited space charge accumulation (LSA) mode of oscillation and the usable range of doping to frequency was shown to be 2×104 to 2×105 sec/cm3 with an optimum value of about 6×104 sec/ cm3.
Journal ArticleDOI

Hot electron effects at microwave frequencies in GaAs

TL;DR: In this article, the frequency dependence of the electron mobility in GaAs has been calculated numerically, and it has been shown that heating processes within the valley control the response speed of the negative conductivity and cause the threshold field to rise with frequency.
Journal ArticleDOI

Frequency conversion and amplification with an LSA diode oscillator

TL;DR: The LSA oscillator has been experimentally shown to have several useful functions other than basic microwave power generation as discussed by the authors, such as frequency down-conversion with gain, efficient upconversion, amplitude-modulated LDA oscillation, injection phase-locked LDA, and video amplification.
Journal ArticleDOI

Self-resonant LSA oscillator diode

TL;DR: In this paper, the authors describe the LSA mode of a microwave oscillator for GaAs and describe the frequency × diameter product and doping concentration/frequency ratio for self-resonance.
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