Patent
Differential silicon oxide etch
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TLDR
In this article, a method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch, which excites a fluorine-containing precursor.Abstract:
A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide.read more
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TL;DR: In this paper, the authors described a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor, where the plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials.
References
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Semiconductor device, manufacturing method, and electronic device
TL;DR: In this paper, the authors proposed a thin-film transistor with an active layer made of polycrystalline zinc oxide (ZnO) to which a group V element is added.
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Dan Maydan,Sasson Somekh,David Nin-Kou Wang,David Cheng,Masato M. Toshima,Isaac Harari,Peter D. Hoppe +6 more
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TL;DR: In this paper, a single wafer, semiconductor processing reactor is described, which is capable of thermal CVD, plasmaenhanced CVD and plasma assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing.