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Journal ArticleDOI

Do built‐in fields improve solar cell performance?

Martin A. Green
- 01 Jan 2009 - 
- Vol. 17, Iss: 1, pp 57-66
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TLDR
In this paper, the impact of built-in fields on the performance of solar cells has been investigated and the trade-off between decreased absorption and increased carrier collection has been discussed.
Abstract
Intrinsic fields can be built into solar cells by varying the doping level and/or the cell bandgap with potential benefits long recognised. A counteracting effect is that varying the doping or bandgap from the optimum for a particular material system will result in poorer material quality. New solutions are described to the standard semiconductor transport and recombination equations that allow such effects to be incorporated and the impact of these fields on device current and voltage to be assessed. Clear boundaries are found between when built-in fields are beneficial or deleterious. For the case of doping gradients, built-in fields decrease both cell current and voltage if carrier lifetime decrease more quickly than as the inverse square of doping; decrease current but can increase voltage if the inverse variation is between linear and square; can improve both if less than linear but only significantly if lifetime varies less than the inverse square root of doping. In the case of a graded bandgap, an optimal field exists as a trade-off between decreased absorption and increased carrier collection. Copyright © 2008 John Wiley & Sons, Ltd.

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Citations
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TL;DR: In this paper, an analytical model for the photon flux and internal quantum efficiency in double-graded bandgap solar cells, considering the effects of subbandgap absorption and grading-dependent carrier collection properties, is developed.
Patent

High efficiency multijunction solar cells

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References
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Journal ArticleDOI

Surface recombination velocity of highly doped n-type silicon

TL;DR: In this article, the minority-carrier surface recombination velocity of n-type silicon, Sp, was analyzed using photoconductance decay measurements of the recombination currents corresponding to different phosphorus diffusions, including oxide-, unpassivated, and metal-coated surfaces.
Journal ArticleDOI

A reciprocity theorem for charge collection

TL;DR: In this paper, it was shown that the current collected by a p−n junction in presence of a unit point generation of carriers at a point P is the same (apart from the dimensions) as the excess minority carrier density at P due to a unit density at the junction edge.
Journal ArticleDOI

Drift fields in photovoltaic solar energy converter cells

TL;DR: In this article, a theoretical investigation into the effects of electrostatic drift fields in the diffused region and in the base region of photovoltaic solar energy converter cells has been carried out.
Journal ArticleDOI

Generalized relationship between dark carrier distribution and photocarrier collection in solar cells

TL;DR: In this article, the probability of collection of a photogenerated carrier in a solar cell and the dark minority carrier concentration at the point of generation was generalized to three-dimensional geometries with arbitrary doping profile and variable band gap including abrupt compositional changes, grain boundaries and floating junctions.
Journal ArticleDOI

Modelling implications of recent silicon bandgap narrowing expressions

TL;DR: In this paper, the authors address issues such as minority carrier concentrations, effective doping densities, built-in electric fields and optimum surface doping concentrations, according to the bandgap narrowing expressions used in the recent silicon solar cell literature.
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