Journal ArticleDOI
Dopant incorporation, Fermi-level movement, and band offset at the Ge/GaAs(001) interface
S. A. Chambers,T. J. Irwin +1 more
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In this paper, the authors used high-energy Auger electron diffraction and x-ray photoelectron diffraction to obtain a direct structural determination of $n$-type dopant atoms coevaporated with ultrathin Ge epilayers on GaAs(001).Abstract:
We have used high-energy Auger electron diffraction and x-ray photoelectron diffraction to obtain a direct structural determination of $n$-type dopant atoms coevaporated with ultrathin Ge epilayers on GaAs(001). Angular distributions of photoelectron intensity from the isovalent dopant atoms P and Sb establish that P atoms uniformly incorporate into the epilayer and occupy lattice sites, whereas Sb atoms surface segregate. These structural results are strongly correlated with Fermi-level movement at the interface. The Fermi-level energy within the band gap is critically dependent on overlayer structure. However, the valence-band offset remains constant at 0.60\ifmmode\pm\else\textpm\fi{}0.05 eV, independent of dopant kind, quantity, and spatial distribution in the epilayer. Significant Schottky-barrier-height reduction (0.4-0.5 eV) occurs only when dopant atoms occupy Ge lattice sites.read more
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Journal ArticleDOI
A critical review of ohmic and rectifying contacts for silicon carbide
Lisa M. Porter,Robert F. Davis +1 more
TL;DR: In this article, the Schottky barrier heights (SBHs), thermal stability, and chemical reactions of SiC polytypes have been investigated for a wide band gap semiconductor.
Journal ArticleDOI
X-Ray photoelectron and auger electroo forward scattering: A new tool for surface crystallography
TL;DR: In this paper, a critical review is given of a new technique, developed during the past several years, for surface crystallography, based on the observation that X-ray photoelectrons and Auger electrons with kinetic energies of a few hundred electron volts and above exhibit enhanced intensities along internuclear axes, or bond directions, connecting the emitting atom with its nearest and next-nearest neighbor atoms.
Journal ArticleDOI
Unintentional F doping of SrTiO3(001) etched in HF acid-structure and electronic properties
TL;DR: In this article, the authors show that the HF acid etch commonly used to prepare SrTiO3(001) for heteroepitaxial growth of complex oxides results in a non-negligible level of F doping within the terminal surface layer of TiO2.
Book ChapterDOI
The Study of Surface Structures by Photoelectron Diffraction and Auger Electron Diffraction
TL;DR: A knowledge of the atomic identities, positions, and bonding mechanisms within the first 3-5 layers of a surface is essential to any quantitative microscopic understanding of surface phenomena as mentioned in this paper, which implies knowing bond directions, bond distances, site symmetries, coordination numbers, and the degree of both short-range and long-range order present in this selvedge region.
Journal ArticleDOI
Band offsets at the epitaxial anatase TiO2/n-SrTiO3(001) interface
Scott A. Chambers,Scott A. Chambers,Takeo Ohsawa,Chong M. Wang,Igor Lyubinetsky,John E. Jaffe +5 more
TL;DR: In this article, the authors used high-energy resolution X-ray photoelectron spectroscopy to measure valence band offsets at the epitaxial anatase TiO 2 (0,0,1)/ n -SrTiO 3 (0,0, 1) heterojunction prepared by molecular beam epitaxy.
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