Journal ArticleDOI
Effect of a GaAs buffer layer grown at low substrate temperatures on a high‐electron‐mobility modulation‐doped two‐dimensional electron gas
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In this paper, a GaAs buffer layer was added to a molecular beam epitaxially grown structure with the incorporation of a low-temperature buffer layer for sidegating in GaAs integrated circuits.Abstract:
Sidegating in GaAs integrated circuits can be eliminated in molecular beam epitaxially grown structure with the incorporation of a GaAs buffer layer grown at low substrate temperatures (200–300 °C). We have grown two films which were identical except one had the low‐temperature buffer layer included in the film structure. The films were modulation‐doped heterojunctions designed to produce a high‐mobility two‐dimensional electron gas. The electrical characteristics of the two‐dimensional electron gas were identical for the two samples. No deleterious effect on the mobility or carrier density was observed with the incorporation of the low‐temperature buffer layer. At 4.2 K both films exhibited carrier densities of 4×1011 cm−2 and mobilities of (1.4–1.7)×106 cm2/V s in the dark. After a brief illumination at 4.2 K, the samples exhibited carrier densities of 5×1011 cm−2 and mobilities of (1.6–2.0)×106 cm2/V s. These electron mobilities are comparable to the highest electron mobilities ever obtained at these e...read more
Citations
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Journal ArticleDOI
Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
A. C. Warren,Jerry M. Woodall,John L. Freeouf,Daniel R. Grischkowsky,D. T. McInturff,Michael R. Melloch,Nobuo Otsuka +6 more
TL;DR: Arsenic precipitates have been observed in GaAs low-temperature buffer layers (LTBLs) used as "substrates" for normal molecular beam epitaxy growth as mentioned in this paper.
Journal ArticleDOI
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
TL;DR: In this paper, a GaAs buffer layer was grown at low substrate temperatures (250 °C) and the film structures were examined using transmission electron microscopy, showing that the GaAs layer was free of defects or clusters.
Patent
Method of making a compound semiconductor having metallic inclusions
J. Burroughes,Rodney T. Hodgson,D. T. McInturff,M. R. Melloch,Nobuo Otsuka,Paul M. Solomon,A. C. Warren,Jerry M. Woodall +7 more
TL;DR: A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers was presented in this paper.
Journal ArticleDOI
Assessment of MOCVD- and MBE-growth GaAs for high-efficiency solar cell applications
S.P. Tobin,S. M. Vernon,C. Bajgar,S.J. Wojtczuk,Michael R. Melloch,A. Keshavarzi,T.B. Stellwag,S. Venkatensan,Mark Lundstrom,K. Emery +9 more
TL;DR: In this paper, a critical assessment of the photovoltaic quality of epitaxial GaAs grown by metal-organic chemical vapor deposition (MOCVD) and by molecular-beam epitaxy (MBE) is reported.
Journal ArticleDOI
Molecular beam epitaxy of nonstoichiometric semiconductors and multiphase material systems
TL;DR: In this article, it was shown that 2% excess arsenic can be incorporated into the epilayer, in the form of antisites, but there is also a substantial concentration of gallium vacancies.
References
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Journal ArticleDOI
New MBE buffer used to eliminate backgating in GaAs MESFETs
TL;DR: In this paper, a buffer is grown by molecular beam epitaxy (MBE) at low substrate temperatures (150-300 degrees C) using Ga and As/sub 4/beam fluxes.
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Improved Electron Mobility Higher than 106 cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
TL;DR: In this paper, the authors investigated the electron mobility in selectively doped GaAs/N-AlxGa1-xAs (x=0.3) heterostructures grown by MBE.
Journal ArticleDOI
Backgating in GaAs MESFET's
Chris Kocot,C.A. Stolte +1 more
TL;DR: In this paper, the authors investigated the phenomenon of backgating in GaAs depletion mode MESFET devices and proposed a model based on DLTS and spectral measurements to predict that closely compensated substrate material will minimize backgation.
Journal ArticleDOI
GaAs structures with electron mobility of 5×106 cm2/V s
TL;DR: In this article, a modification-doped GaAs heterostructures with low-temperature electron mobilities of 5.0×106 cm2/V at a two-dimensional electron areal density of 1.6×1011 cm−2 were made.
Journal ArticleDOI
Backgating and light sensitivity in ion-implanted GaAs integrated circuits
TL;DR: In this paper, the effect of trap filling on channel resistance and the resulting speed-power variations arising from illumination and backgating was investigated on discrete MESFETs.