Journal ArticleDOI
Effect of nitride passivation on the visible photoluminescence from Si-nanocrystals
Moon-Seung Yang,Kwan-Sik Cho,Ji-Hong Jhe,Se-Young Seo,JungHoon Shin,Kyung Joong Kim,Dae Won Moon +6 more
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TLDR
In this article, the effect of nitride passivation on the visible photoluminescence from nanocrystal Si (nc-Si) is investigated, and the results demonstrate that control of the surface passivation is critical in controlling the nc-Si luminescence.Abstract:
The effect of nitride passivation on the visible photoluminescence from nanocrystal Si (nc-Si) is investigated. Silicon-rich silicon nitride (SRSN) and silicon-rich silicon oxide (SRSO), which consist of nc-Si embedded in silicon nitride and silicon oxide, respectively, were prepared by reactive ultrahigh vacuum ion beam sputter deposition followed by a high temperature anneal. Both SRSN and SRSO display photoluminescence peaks after high temperature annealing, coincident with the formation of Si nanocrystals, and similar changes in the peak luminescence position with the excess Si content. However, the luminescence peak positions from SRSN are blueshifted by about 0.6 eV over that of comparable SRSO such that its luminescence peaks in the visible range. The results demonstrate that control of the surface passivation is critical in controlling the nc-Si luminescence, and indicate the possibility of using nitride-passivated nc-Si for visible luminescence applications including white luminescence.read more
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Journal ArticleDOI
Silicon quantum dot nanostructures for tandem photovoltaic cells
Gavin Conibeer,Martin A. Green,Eun-Chel Cho,Dirk König,Young-Hyun Cho,Thipwan Fangsuwannarak,Giuseppe Scardera,E. Pink,Yidan Huang,T. Puzzer,Shujuan Huang,Dengyuan Song,Chris Flynn,Sang-Wook Park,Xiaojing Hao,Daniel F. Mansfield +15 more
TL;DR: In this article, the authors characterised and modeled data on fabrication of Si and Sn QD nanostructures in various dielectric matrices by self-organised thin film deposition, with demonstrated confined energy levels of 1.7 eV for 2-nm diameter QDs.
Journal ArticleDOI
When Small Is Different: Some Recent Advances in Concepts and Applications of Nanoscale Phenomena
TL;DR: In this article, the authors describe some properties of materials that undergo qualitative, often sudden, changes below a certain size scale and present a general description of these size-dependent properties.
Journal ArticleDOI
Origin and evolution of photoluminescence from Si nanocrystals embedded in a SiO 2 matrix
TL;DR: In this paper, a detailed analysis of the photoluminescence (PL) from Si nanocrystals (NCs) embedded in a silicon-rich matrix is reported, and the authors show that the larger the size of Si NCs and the higher the interface state density (in particular, $\mathrm{Si}\mathm{O}$ bonds), the more beneficial for the interface-state recombination process to surpass the quantum confinement process.
Journal ArticleDOI
Photoluminescence of Si-rich silicon nitride: Defect-related states and silicon nanoclusters
TL;DR: In this paper, photoluminescence from defect-related states and Si nanoclusters was observed in Si-rich silicon nitride films simultaneously, and the results demonstrate that the luminescence was selected by the excitation energy.
Journal ArticleDOI
Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells
Eun-Chel Cho,Martin A. Green,Gavin Conibeer,Dengyuan Song,Young-Hyun Cho,Giuseppe Scardera,Shujuan Huang,Sang-Wook Park,Xiaojing Hao,Yidan Huang,Lap Van Dao +10 more
TL;DR: In this article, a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quantum dots and to utilize this in complete thin-filament silicon based tandem cell, without the constraints of lattice matching, but which nonetheless gives an enhanced efficiency through the increased spectral collection efficiency.
References
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Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TL;DR: In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
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Optical gain in silicon nanocrystals
TL;DR: It is demonstrated that light amplification is possible using silicon itself, in the form of quantum dots dispersed in a silicon dioxide matrix, which opens a route to the fabrication of a silicon laser.
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Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen
TL;DR: The photoluminescence (PL) of silicon quantum dots present in porous silicon can be tuned from the near infrared to the ultraviolet when the surface is passivated with Si-H bonds as discussed by the authors.
Journal ArticleDOI
Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2 superlattice approach
TL;DR: In this article, the size control of SiO/SiO2 superlattices with an upper limit of the nanocrystal sizes of 3.8, 2.5, and 2.0 nm was investigated.
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Correlation between luminescence and structural properties of Si nanocrystals
TL;DR: In this paper, strong room-temperature photoluminescence (PL) in the wavelength range 650-950 nm has been observed in high temperature annealed (1000-1300 °C) substoichiometric silicon oxide (SiOx) thin films prepared by plasma enhanced chemical vapor deposition.