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Journal ArticleDOI

Effects of quantitative disorder on the electronic structure of tetrahedrally-bonded amorphous semiconductors

T. Hama, +1 more
- 01 Jan 1979 - 
- Vol. 29, Iss: 4, pp 371-373
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TLDR
In this article, the effects of quantitative disorder on the valence band in the electronic density of states (DOS) of tetrahedrally-bonded amorphous semiconductors on the basis of a simple Weaire-Thorpe model were studied.
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This article is published in Solid State Communications.The article was published on 1979-01-01. It has received 5 citations till now. The article focuses on the topics: Coherent potential approximation & Electronic structure.

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Citations
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Book ChapterDOI

Theory of Electronic Properties of Amorphous Semiconductors

TL;DR: In this article, the relationship between the kinds of disorder and the electronic structures of amorphous Si, such as the energy bounds and the behaviour of the band tails, was investigated.
Journal ArticleDOI

Charge fluctuations in hydrogenated amorphous silicon

TL;DR: In this article, the electronic density of states and the charge distribution using a Weaire-Thorpe tight binding hamiltonian, which was generalized to include Hydrogen atoms, were calculated using the recursion method.
Journal ArticleDOI

Electrons in disordered systems with strong short-range order and off-diagonal randomness

TL;DR: In this paper, a cluster theory, which contains off-diagonal randomness, configurational short-range order and diagonal randomness is applied to the study of electrons in damaged honeycomb lattices with correlated unpaired bonds.
Journal ArticleDOI

Density of states and charge distribution in hydrogenated amorphous silicon

TL;DR: In this article, the local density of states and the charge distribution in a cluster model of hydrogenated amorphous silicon was calculated using the recursion method, which indicated an average charge transfer of 0.3 electrons from silicon to hydrogen.
Journal ArticleDOI

Phonons in disordered systems with strong short-range order. III. ODR in honeycomb lattices

TL;DR: In this article, a cluster theory with configurational short-range order and diagonal randomness is applied to the study of transverse phonons in damaged honeycomb lattices with correlated unpaired bonds, e.g. microscopic cracks, dangling bonds, vacancies and voids.
References
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Journal ArticleDOI

The theory and properties of randomly disordered crystals and related physical systems

TL;DR: A review of the methods for determining the behavior of solids whose properties vary randomly at the microscopic level, with principal attention to systems having composition variation on a well-defined structure (random "alloys") can be found in this paper.
Journal ArticleDOI

X-Ray Photoemission Spectra of Crystalline and Amorphous Si and Ge Valence Bands

TL;DR: In this paper, high-resolution x-ray photoelectron spectra of the total valence bands of crystalline and amorphous silicon and germanium are reported.
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