Journal ArticleDOI
Electrical properties of polyacetylene/polysiloxane interface
TLDR
In this article, the I•V and C•V measurements were used to explore the polyacetylene/polysiloxane interface electrical properties and the electrical conduction mechanism in this interface was found to be a Schottky-Richardson mechanism.Abstract:
Polyacetylene/polysiloxane interface states have been investigated using metal‐insulator‐semiconductor (MIS) diodes. The 1‐mm2 MIS diodes (Al/polysiloxane/polyacetylene) have been fabricated by use of a conventional photolithographic technique. The I‐V and C‐V measurements were used to explore the polyacetylene/polysiloxane interface electrical properties. The electrical conduction mechanism in this interface was found to be a Schottky‐Richardson mechanism. Using the C‐V measurements to determine the interface states density distribution, it was found that the distribution had a U shape in the gap and its minimum value was 6×1013 eV−1 cm−2. An attempt was made to fabricate an insulating gate field‐effect transistor which worked as a depletion‐type transistor with a very low transconductance, gm =13 nΩ−1.read more
Citations
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Organic Thin Film Transistors for Large Area Electronics
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
Journal ArticleDOI
Electron and ambipolar transport in organic field-effect transistors.
Journal ArticleDOI
Device Physics of Solution‐Processed Organic Field‐Effect Transistors
TL;DR: In this article, the materials, charge-transport, and device physics of solution-processed organic field-effect transistors are reviewed, focusing in particular on the physics of the active semiconductor/dielectric interface.
Journal ArticleDOI
Organic thin-film transistors: a review of recent advances
TL;DR: This paper review in more detail related work that originated at IBM during the last four years and has led to the fabrication of high-performance organic transistors on flexible, transparent plastic substrates requiring low operating voltages.
Journal ArticleDOI
Macromolecular electronic device: Field-effect transistor with a polythiophene thin film
TL;DR: In this paper, the first solid-state field-effect transistor has been fabricated utilizing a film of an organic macromolecule, polythiophene, as a semiconductor.
References
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Journal ArticleDOI
Electrical Conductivity in Doped Polyacetylene.
C. K. Chiang,C. R. Fincher,Yung Woo Park,Alan J. Heeger,H. Shirakawa,E. J. Louis,S. C. Gau,Alan G. MacDiarmid +7 more
TL;DR: In this paper, a metal-to-insulator transition at dopant concentrations near 1% was shown for polyacetylene, a new class of conducting polymers in which the electrical conductivity can be systematically and continuously varied over a range of eleven orders of magnitude.
Journal ArticleDOI
The si-sio, interface – electrical properties as determined by the metal-insulator-silicon conductance technique
E. H. Nicollian,A. Goetzberger +1 more
TL;DR: In this article, a realistic characterization of the Si-SiO 2 interface is developed, where a continuum of states is found across the band gap of the silicon, and the dominant contribution in the samples measured arises from a random distribution of surface charge.
Journal ArticleDOI
An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
TL;DR: In this article, the M-O-S diode was introduced, and a theory for its operation in the absence of surface states was obtained, and it was shown that surface states with non-zero relaxation times may increase the capacitance of the device, as well as affect the proportion of applied voltage which appears across the silicon.