Journal ArticleDOI
Electroabsorption in GaAs/AlGaAs coupled quantum well waveguides
Mohammed N. Islam,R. L. Hillman,David A. B. Miller,Daniel S Chemla,Arthur C. Gossard,J.H. English +5 more
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TLDR
In this article, a novel GaAs/AlGaAs coupled quantum well structure, consisting of two 46 A wells separated by a 11.5 A barrier, was embedded in a leaky waveguide.Abstract:
A novel GaAs/AlGaAs coupled quantum well structure, consisting of two 46 A wells separated by a 11.5 A barrier, was embedded in a leaky waveguide. Polarization anisotropy and quantum‐confined Stark effect absorption changes are observed, and a 14:1 modulator is demonstrated operating at the peak of the first light‐hole transition. Although the lowest energy transitions behave as predicted by tunneling resonance calculations, higher energy states exhibit unusual behavior due to valence‐band mixing.read more
Citations
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Journal ArticleDOI
Linear and nonlinear optical properties of semiconductor quantum wells
TL;DR: In this paper, the experimental and theoretical investigations of the linear and nonlinear optical properties of semiconductor quantum well structures, including the effects of electrostatic fields, extrinsic carriers and real or virtual photocarriers, are reviewed.
Journal ArticleDOI
Attojoule Optoelectronics for Low-Energy Information Processing and Communications
TL;DR: This work shows that the next major interconnect dissipations are in the electronic circuits for receiver amplifiers, timing recovery, and multiplexing, and it can address these through the integration of photodetectors to reduce or eliminate receiver circuit energies, free-space optics to eliminate the need for timing andmultiplexing circuits, and using optics generally to save power by running large synchronous systems.
Journal ArticleDOI
Attojoule Optoelectronics for Low-Energy Information Processing and Communications: a Tutorial Review
TL;DR: Optics offers unique opportunities for reducing energy in information processing and communications while resolving the problem of interconnect bandwidth density inside machines as discussed by the authors, and the physics of optics and optoelectronics fundamentally address both interconnect energy and bandwidth density.
Journal ArticleDOI
Energy consumption in optical modulators for interconnects
TL;DR: Though electroabsorption modulators with large reverse bias have substantial energy penalties from photocurrent dissipation, it is argued that modulator diodes with thin depletion regions and operating in small reverse and/or forward bias could have little or no photocurrent energy penalty, even conceivably being more energy-efficient than an ideal loss-less modulator.
Journal ArticleDOI
Indirect excitons in van der Waals heterostructures at room temperature.
TL;DR: The observation of IXs at room temperature in van der Waals transition metal dichalcogenide (TMD) heterostructure establishes the TMD heterostructures as a material platform both for a field of high-temperature quantum Bose gases of IX's and for aField ofhigh-tem temperature excitonic devices.
References
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Journal ArticleDOI
Electric field dependence of optical absorption near the band gap of quantum-well structures.
David A. B. Miller,Daniel S. Chemla,T. C. Damen,Arthur C. Gossard,W. Wiegmann,Thomas H. Wood,Charles A. Burrus +6 more
TL;DR: Detailed calculations of the shift of exciton peaks are presented including (i) exact solutions for single particles in infinite wells, (ii) tunneling resonance calculations for finite wells, and (iii) variational calculations ofexciton binding energy in a field.
Journal ArticleDOI
Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect
David A. B. Miller,Daniel S. Chemla,T. C. Damen,Arthur C. Gossard,W. Wiegmann,Thomas H. Wood,Charles A. Burrus +6 more
TL;DR: In this article, the authors present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers.
Journal ArticleDOI
The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulation
David A. B. Miller,Daniel S. Chemla,T. C. Damen,Thomas H. Wood,C. A. Burrus,Arthur C. Gossard,W. Wiegmann +6 more
TL;DR: In this article, the quantum well self-electrooptic effect devices with a CW laser diode as the light source were shown to have bistability at room temperature with 18 nW of incident power, or with 30 ns switching time at 1.6 mW with a reciprocal relation between switching power and speed.
Journal ArticleDOI
Large room‐temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures
David A. B. Miller,Daniel S. Chemla,D. J. Eilenberger,Peter W. Smith,A. C. Gossard,W. T. Tsang +5 more
TL;DR: The first measurements of optical absorption saturation in GaAs/GaAlAs multiple quantum well (MQW) structures at room temperature near the heavy hole exciton peak were reported in this article.
Journal ArticleDOI
Room-temperature excitonic nonlinear-optical effects in semiconductor quantum-well structures
TL;DR: In this article, a comprehensive discussion of optical transitions in these microstructures is given, including excitonic effects and the specific features of room-temperature exciton resonances.