Journal ArticleDOI
Electrode dependence of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O3 and SrBi2Ta2O9 thin films
Jin-Ping Han,T. P. Ma +1 more
Reads0
Chats0
TLDR
In this article, a model that is based on the catalytic activities of the top electrode to dissociate hydrogen molecules into hydrogen atoms, with the latter subsequently migrating into PZT or SBT films to cause oxygen deficiency and its associated property degradation was proposed.Abstract:
Forming gas annealing causes changes in the remanent polarization (Pr), coercive field (Ec), and leakage current (I) in both PZT [Pb(Zr,Ti)O3] and SBT (SrBi2Ta2O9) samples with a variety of top electrode materials (Pt, Au, Ag, Cu, Ni, and In2O3), and the degree of degradation depends strongly on the top electrode material. These results may be explained by a model that is based on the catalytic activities of the top electrode to dissociate hydrogen molecules into hydrogen atoms, with the latter subsequently migrating into PZT or SBT films to cause oxygen deficiency and its associated property degradation. This model can be expanded to explain the recovery phenomenon resulting from oxygen annealing, which also depends on the catalytic activity of the top electrode to produce atomic oxygen from molecular oxygen.read more
Citations
More filters
Journal ArticleDOI
Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories
TL;DR: In this paper, a review of the status of thin film ferroelectric materials for nonvolatile memories is presented, where key materials issues relevant to the integration of these materials on Si wafers are discussed.
Journal ArticleDOI
The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film
Takao Shimizu,Kiliha Katayama,Takanori Kiguchi,Akihiro Akama,Toyohiko J. Konno,Osami Sakata,Hiroshi Funakubo +6 more
TL;DR: This study strongly suggests that the HfO2-based materials are promising for various ferroelectric applications because of their comparable ferro electric properties including polarization and Curie temperature to conventional ferroElectric materials together with the reported excellent scalability in thickness and compatibility with practical manufacturing processes.
Journal ArticleDOI
Effect of hydrogen on pb(zr, ti)o3-based ferroelectric capacitors
Sanjeev Aggarwal,S. R. Perusse,C. W. Tipton,R. Ramesh,H. D. Drew,T. Venkatesan,D. B. Romero,V. B. Podobedov,A. Weber +8 more
TL;DR: In this article, it was shown that hydrogen incorporation is the primary mechanism for the degradation of ferroelectric properties and the most probable site for hydrogen ions is discussed based on ionic radii, crystal structure, electrical properties, and Raman spectra.
Journal ArticleDOI
Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes
TL;DR: In this paper, the effects of forming gas annealing (FGA) on the ferroelectric properties of Hf0.5Zr 0.5O2 (HZO) films were examined.
Journal ArticleDOI
Integration technology for ferroelectric memory devices
Kinam Kim,Yoon-Jong Song +1 more
TL;DR: In this paper, it is reviewed how to integrate the ferroelectric devices for producing commercial products.
References
More filters
Book
Heterogeneous Catalysis: Principles and Applications
TL;DR: In this paper, the basic principles of catalysis adsorption on solid surfaces and chemisorption at metal surfaces were discussed, as well as the kinetics of catalysed reactions.
Reference BookDOI
Hydrogen effects in catalysis : fundamentals and practical applications
Zoltan Paal,P. G. Menon +1 more
TL;DR: In this paper, the authors cover hydrogen effects in catalysis in the broadest sense, from surface science to industrial applications, and draw the attention of the catalysis community to the importance of the phenomena of hydrogen effects both in the science and technology of catalysis.
Journal ArticleDOI
Electron microscopy of supported metal particles II. Further studies of Pt/TiO
TL;DR: In this paper, it was shown that the adsorption of H2 and CO could be partially restored if the sample in the SMSI state were treated with H2O vapor at 525 K or O2 at 875 K, the latter treatment being more effective.
Journal ArticleDOI
Analysis of the degradation of PZT and SrBi2Ta2O9 thin films with a reductive process
TL;DR: In this article, a reductive heat treatment was applied to PZT and SBT thin films to investigate their electrical properties, crystal structure and composition, and the results showed that the reduction of ferroelectricity of these degraded films was compensated by subsequent anneal in oxygen.