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Electronic transport on carbon nanotube networks : a multiscale computational approach

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TLDR
In order to guide the frantic search for high-conductivity films of nanotube networks, this work turns to the microscopic scale where it is developed a computationally efficient way for calculating the ballistic transport across these networks.
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This article is published in Nano Communication Networks.The article was published on 2011-03-01 and is currently open access. It has received 17 citations till now. The article focuses on the topics: Nanotube & Ballistic conduction.

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Citations
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Journal ArticleDOI

Flexible Carbon Nanotube Films for High Performance Strain Sensors

TL;DR: The insights about the relationship between film parameters and electromechanical properties can be used to improve the design and fabrication of CNT strain sensors.
Journal ArticleDOI

Flexible temperature sensors: A review

TL;DR: The reliability and challenges of flexible temperature sensors are outlined from the point of view of structural design and implementation and the temperature-responsive mechanisms, temperature-sensitive materials, and production methods of temperature sensors and recent outcomes of related papers are explained and classified in a detailed perspective.
Journal ArticleDOI

Effect of single wall carbon nanotube networks on gas sensor response and detection limit

TL;DR: In this article, a single wall carbon nanotube (SWNT) based gas sensor is fabricated with mainly two type of surface-networks, (i) SWNT random network (CNT-TFR) and (ii) CNT-μR).
Journal ArticleDOI

Thin and flexible all-solid supercapacitor prepared from novel single wall carbon nanotubes/polyaniline thin films obtained in liquid-liquid interfaces

TL;DR: In this paper, the synthesis and characterization of single wall carbon nanotubes/polyaniline (SWNTs/PAni) nanocomposite thin films in a liquid-liquid interface, as well as the subsequent construction of a flexible all-solid supercapacitor were described.
Journal Article

Structural deformation and intertube conductance of crossed carbon nanotube

TL;DR: It is found that the interTube contact distance is very sensitive to the applied force in the range of 0--10 nN, and the intertube conductance is sizable for realistic deformation expected from substrate interaction.
References
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Book

Introduction to percolation theory

TL;DR: In this paper, a scaling solution for the Bethe lattice is proposed for cluster numbers and a scaling assumption for cluster number scaling assumptions for cluster radius and fractal dimension is proposed.
Journal ArticleDOI

Carbon Nanotubes--the Route Toward Applications

TL;DR: Many potential applications have been proposed for carbon nanotubes, including conductive and high-strength composites; energy storage and energy conversion devices; sensors; field emission displays and radiation sources; hydrogen storage media; and nanometer-sized semiconductor devices, probes, and interconnects.
Book

Introduction to percolation theory

TL;DR: In this article, a scaling solution for the Bethe lattice is proposed for cluster numbers and a scaling assumption for cluster number scaling assumptions for cluster radius and fractal dimension is proposed.
Journal ArticleDOI

Density-functional method for nonequilibrium electron transport

TL;DR: In this paper, an ab initio method for calculating the electronic structure, electronic transport, and forces acting on the atoms, for atomic scale systems connected to semi-infinite electrodes and with an applied voltage bias.

Electronic Transport in Mesoscopic Systems

TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
Related Papers (5)
Frequently Asked Questions (17)
Q1. What are the contributions in "Electronic transport on carbon nanotube networks: a multiscale computational approach" ?

Nanotubes disorderly distributed in a film offers many possible paths for charge carriers to travel across the entire system, but the theoretical description of how this charge transport occurs is rather challenging for involving a combination of intrinsic nanotube properties with network morphology aspects. Here the authors attempt to describe the transport properties of such films in two different length scales. Firstly, from a purely macroscopic point of view the authors carry out a geometrical analysis that shows how the network connectivity depends on the nanotube concentration and on their respective aspect ratio. Once this is done, the authors are able to calculate the resistivity of a heavily disordered networked film. This can serve as a guideline in how much room there is for improving the conductivity of such networks. Furthermore, in order to guide the frantic search for high-conductivity films of nanotube networks, the authors turn to the microscopic scale where they have developed a computationally efficient way for calculating the ballistic transport across these networks. 

In order to calculate surface GF elements of semiinfinite nanotubes, the authors apply efficient recursion methods, which are numerically stable and computationally inexpensive. 

In particular, thin metallic films are currently the most promising material to enable the construction of large scale flexible electronic displays [2–4]. 

standard Green function methods can be used to describe the electronic structure and electronic transport characteristics across the nanotube networks. 

Tight binding model Hamiltonians are a very efficient and convenient way to describe electronic structure of materials in general, and are well suited to deal with carbon nanotubes. 

The zero-bias conductance of the system is calculated with the Kubo formula, which provides a simple expression for the conductance by calculating the net electronic current across a reference plane in the system, often referred to as the cleavage plane, which is located between any two parts of the system. 

For a fixed number of rods, and a box of fixed dimensions, a very large number of configurations can be generated by randomly distributing the rods. 

by constructing the appropriate matrix M, it is possible to calculate the resistance between arbitrary nodes of any resistive structure, all that is required is to describe the matrix M according to the specific network connectivity. 

By neglecting all sources of decoherence-inducing scattering, it is possible to calculate the conductance of ideal network films. 

In experimental realisations, metallic electrodes are placed at opposing ends of a film and the resistance is measured between these electrodes in a usual two probe method. 

In order to compare the results with carbon nanotubes, an orbital degeneracy is introduced in the chain Hamiltonian such that there are two independent conducting channels. 

It is also possible to approach electronic transport problems from an atomistic viewpoint, most notably by means of ab-initio density functional theory calculations (DFT) coupled with non-equilibrium Green function methods [20, 21]. 

from V one calculates the potential difference across every resistor in the network, which provides a direct way of calculating the equivalent resistance between any two arbitrary points of the network. 

The volume fraction of a typical laboratory produced nanotube film is related to the volume of CNT solution used for deposition [5, 6], and can be directly measured. 

On the microscopic scale, the electronic structure of a carbon nanotube can be satisfactorily described by simple model Hamiltonians. 

The average number of connections per rod in a random network was found to scale universally with a combined variable given by the product of the volume fraction with the aspect ratio of the individual rods considered. 

Bearing in mind that the upper bound here obtained assumes a number of ideal conditions that are experimentally unavoidable, this might be a clear indication that the authors are approaching a saturation point in the conductivity of nanotube network films.