Proceedings ArticleDOI
Extremely sensitive magnetoresistance sensors using few-layer graphene/boron-nitride
Kalon Gopinadhan,Young Jun Shin,Rashid Jalil,Thirumalai Venkatesan,Andre K. Geim,A. H. Castro Neto,Hyunsoo Yang +6 more
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TLDR
In this paper, the change in electrical resistance upon an external magnetic field at the atomic level is studied, which is of great interest both fundamentally and technologically, both in terms of physics and engineering.Abstract:
Understanding magnetoresistance, the change in electrical resistance upon an external magnetic field, at the atomic level is of great interest both fundamentally and technologically.read more
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Proceedings ArticleDOI
Wide-dynamic-range magnetic sensor based on magnetic tunnel junctions using perpendicularly magnetized synthetic antiferromagnetic reference layer
TL;DR: Magnetic tunnel junctions with an MgO barrier, which exhibit a giant tunnel magnetoresistance (TMR) effect, have been intensively studied for application to various magnetic sensors in the automotive industry.
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Proceedings ArticleDOI
Wide-dynamic-range magnetic sensor based on magnetic tunnel junctions using perpendicularly magnetized synthetic antiferromagnetic reference layer
TL;DR: Magnetic tunnel junctions with an MgO barrier, which exhibit a giant tunnel magnetoresistance (TMR) effect, have been intensively studied for application to various magnetic sensors in the automotive industry.
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