Journal ArticleDOI
Femtosecond carrier dynamics in GaAs
Reads0
Chats0
TLDR
In this paper, the femtosecond carrier dynamics in GaAs and Al0.3Ga0.7As were investigated using pump probe measurements of transient absorption saturation, and a two-component ultrafast relaxation was observed.Abstract:
Femtosecond carrier dynamics in GaAs and Al0.3Ga0.7As are investigated using pump probe measurements of transient absorption saturation. Pulses of 35 fs duration are used both to excite carriers and to investigate their subsequent scattering out of their initial optically excited states. A two‐component ultrafast relaxation is observed. In GaAs the initial rapid relaxation occurs on a time scale of 10–35 fs. Measurements performed in Al0.3Ga0.7As indicate that this initial process slows significantly to 130–170 fs for increasing band gap.read more
Citations
More filters
Journal ArticleDOI
The Se sensitivity of metals under swift-heavy-ion irradiation: a transient thermal process
TL;DR: In this paper, the effect of the electronic stopping power (Se) in metals irradiated by swift heavy ions was investigated in the framework of the thermal-spike model, and the effect on the lattice temperature induced by swift-heavy ion irradiation was calculated.
Journal ArticleDOI
Probing ultrafast carrier and phonon dynamics in semiconductors
TL;DR: In this article, the status of ultrafast carrier and phonon dynamics in semiconductors is reviewed and a selfconsistent theoretical model is proposed to correlate the carrier dynamics in germanium on an ultrashort time scale.
Journal ArticleDOI
Femtosecond Pump-Probe Reflectivity Study of Silicon Carrier Dynamics
A. J. Sabbah,D. M. Riffe +1 more
TL;DR: In this article, the authors studied the ultrafast optical response of nativeoxide terminated Si(001) with pump-probe reflectivity using 800 nm, 28 fs pulses at an excitation density of $(5.5\ifmmode\pm\else\textpm\fi{}
Journal ArticleDOI
Ion beam induced surface and interface engineering
I.P. Jain,Garima Agarwal +1 more
TL;DR: A review of ion beam modifications at various solids, thin films, and multilayered systems covering wider energy ranges including the older basic concepts is given in this paper. But the results reveal that the ion-solid interaction physics provides a unique way for controlling the produced defects of the desired type at a desired location.
Journal ArticleDOI
Subpicosecond gain dynamics in GaAlAs laser diodes
Morris P. Kesler,Erich P. Ippen +1 more
TL;DR: In this paper, a dynamic carrier heating model is presented to explain all of the observed gain nonlinearities, and the implications of the results on the dynamic response of laser diodes are discussed.
References
More filters
Journal ArticleDOI
Semiconducting and other major properties of gallium arsenide
TL;DR: In this paper, the authors provide numerical and graphical information about many physical and electronic properties of GaAs that are useful to those engaged in experimental research and development on this material, including properties of the material itself, and the host of effects associated with the presence of specific impurities and defects is excluded from coverage.
Book
Quantum Processes in Semiconductors
TL;DR: In this paper, the energy and momentum conservation of phonon-impurity coupling in the diamond lattice is discussed. But the authors do not consider the effect of photo-ionization on photo-deionization of a hydrogenic acceptor.
Journal ArticleDOI
Negative dispersion using pairs of prisms.
TL;DR: It is shown that pairs of prisms can have negative group-velocity dispersion in the absence of any negative material dispersion.
Journal ArticleDOI
Generation of optical pulses as short as 27 femtoseconds directly from a laser balancing self-phase modulation, group-velocity dispersion, saturable absorption, and saturable gain
TL;DR: An ultrasbort-pulse laser is described that, under specific operating conditions, balances the mechanisms of conventional passive mode locking and solitonlike pulse shaping in a single resonator to generate optical pulses that are to the authors' knowledge the shortest yet emitted directly from a laser.
Journal ArticleDOI
Direct observation of ballistic transport in GaAs.
TL;DR: In this paper, the authors present the first direct evidence of hot electrons traversing ballistically a thin GaAs layer, with the use of a tunneling hot-electron-transfer amplifier as an electron spectrometer.