Journal ArticleDOI
Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition
Takashi Kojima,Takayuki Watanabe,Hiroshi Funakubo,Keisuke Saito,Minoru Osada,Masato Kakihana +5 more
TLDR
In this paper, the ferroelectricity of epitaxially grown lanthanide-substituted Bi4Ti3O12, (Bi4−xLnx)Ti 3O12 (Ln=La, Nd, and Sm) thin films with various lanthanides contents (x) was systematically investigated.Abstract:
The ferroelectricity of epitaxially grown lanthanide-substituted Bi4Ti3O12, (Bi4−xLnx)Ti3O12 (Ln=La, Nd, and Sm) thin films with various lanthanide contents (x) was systematically investigated; (104)-oriented epitaxial (Bi4−xLnx)Ti3O12 thin films were grown on (111)SrRuO3∥(111)SrTiO3 substrates by metalorganic chemical vapor deposition. The remanent polarization (Pr) increased with x irrespective of the kind of lanthanide element. The maximum Pr values were 17, 25, and 20 μC/cm2 for (Bi3.44La0.56)Ti3O12, (Bi3.54Nd0.46)Ti3O12, and (Bi3.87Sm0.13)Ti3O12 thin films, where the coercive field (Ec) values were 145, 135, and 135 kV/cm, respectively. Reduction in the Pr values due to the excess substitution of the lanthanide is considered to originate from the solubility limit of the lanthanide in the Bi site in the pseudoperovskite layer. The Nd-substituted film with the largest polarization is comparable to the commercially used Pb(Zr,Ti)O3 films and is a useful candidate for lead-free ferroelectric applications.read more
Citations
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Two‐Dimensional Dielectric Nanosheets: Novel Nanoelectronics From Nanocrystal Building Blocks
Minoru Osada,Takayoshi Sasaki +1 more
TL;DR: The progress made in the properties of dielectric nanosheets is reviewed, highlighting emerging functionalities in electronic applications and a perspective on the advantages offered by this class of materials for future nanoelectronics.
Journal ArticleDOI
From molecules to bismuth oxide-based materials: Potential homo- and heterometallic precursors and model compounds
TL;DR: In this article, a review of the potential of bismuth-containing heterometallic oxides is presented together with feasible applications of the latter, and a variety of structurally related high-nuclearity molecular Bismuth oxo clusters are discussed that serve as model compounds.
Journal ArticleDOI
Controlled crystal growth of layered-perovskite thin films as an approach to study their basic properties
TL;DR: In this article, a-∕b-axis-oriented films are characterized both crystallographically and by electric hysteresis loop, but no evidence for 90° switching of the b domain by an external electric field was obtained.
Journal ArticleDOI
Effect of A Site Substitution on the Properties of CaBi2Nb2O9 Ferroelectric Ceramics
TL;DR: In this paper, the effect of A-site substitution on the piezoelectric coefficient, high-temperature dc resistivity, and thermal depoling behavior of Aurivillius phase CaBi2Nb2O9 ferroelectric ceramics was investigated.
Journal ArticleDOI
Epitaxial growth of ferroelectric oxide films
TL;DR: In this paper, a brief overview of the most common ferroelectric materials, the perovskites and the Aurivillius families, and deposition methods for epitaxial growth are reviewed.
References
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Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides
TL;DR: The effective ionic radii of Shannon & Prewitt [Acta Cryst. (1969), B25, 925-945] are revised to include more unusual oxidation states and coordinations as mentioned in this paper.
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Lanthanum-substituted bismuth titanate for use in non-volatile memories
TL;DR: In this paper, the authors show that lanthanum-substituted bismuth titanate (SBT) thin films provide a promising alternative for FRAM applications, since they are fatigue-free on metal electrodes, they can be deposited at temperatures of ∼650°C and their values of Pr are larger than those of the SBT films.
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Large remanent polarization of (Bi, Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition
TL;DR: In this paper, the remanent polarization (Pr) and coercive field (Ec) of the (104)-oriented epitaxial (Bi3.54Nd0.46)Ti3O12 thin film were 25 μC/cm2 and 135 kV/cm, respectively.
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Structure refinement of commensurately modulated bismuth strontium tantalate, Bi2SrTa2O9
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Direct evidence of A-site-deficient strontium bismuth tantalate and its enhanced ferroelectric properties
TL;DR: The Rietveld refinement of synchrotron-radiation diffraction has been performed to investigate the displacive-type ferroelectricity and crystal chemistry for Sr-deficient and Bi-excess strontium bismuth tantalate.