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Field-effect modulation of Seebeck coefficient in single PbSe nanowires.

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TLDR
A novel strategy to control the thermoelectric properties of individual PbSe nanowires using a field-effect gated device and direct electrical field control of sigma and S suggests a powerful strategy for optimizing ZT in thermoeLECTric devices.
Abstract
In this Letter, we present a novel strategy to control the thermoelectric properties of individual PbSe nanowires. Using a field-effect gated device, we were able to tune the Seebeck coefficient of single PbSe nanowires from 64 to 193 µV·K -1 . This direct electrical field control of σ and S suggests a powerful strategy for optimizing ZT in thermoelectric devices. These results represent the first demonstration of fieldeffect modulation of the thermoelectric figure of merit in a single semiconductor nanowire. This novel strategy for thermoelectric property modulation could prove especially important in optimizing the thermoelectric properties of semiconductors where reproducible doping is difficult to achieve.

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Journal ArticleDOI

Semiconductor nanowires for energy conversion.

TL;DR: It is discovered that the thermoconductivity of the silicon nanowires can be significantly reduced due to phonon scattering, pointing to a very promising approach to design better thermoelectrical materials.
Journal ArticleDOI

25th Anniversary Article: Semiconductor Nanowires – Synthesis, Characterization, and Applications

TL;DR: A detailed explanation of the unique properties associated with the one-dimensional nanowire geometry will be presented, and the benefits of these properties for the various applications will be highlighted.
Journal ArticleDOI

Large and Tunable Photothermoelectric Effect in Single-Layer MoS2

TL;DR: A large and tunable Seebeck coefficient of the single-layer MoS(2) paves the way to new applications of this material such as on-chip thermopower generation and waste thermal energy harvesting.

Large and Tunable Photothermoelectric Effect in Single-Layer MoS 2

TL;DR: In this article, the photoresponse of single-layer MoS2 field effect transistors was studied by scanning photocurrent microscopy and it was shown that the photothermoelectric effect is dominant over the separation of photoexcited electron−hole pairs across the Schottky barriers at the MoS 2/electrode interfaces.
Journal ArticleDOI

Single-molecule electronics: from chemical design to functional devices

TL;DR: This review aims at highlighting the chemical design and synthesis of single molecule devices as well as their electrical and structural characterization, including a historical overview and the developments during the last 5 years.
References
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Journal ArticleDOI

Thin-film thermoelectric devices with high room-temperature figures of merit

TL;DR: Th thin-film thermoelectric materials are reported that demonstrate a significant enhancement in ZT at 300 K, compared to state-of-the-art bulk Bi2Te3 alloys, and the combination of performance, power density and speed achieved in these materials will lead to diverse technological applications.
Journal ArticleDOI

Enhanced thermoelectric performance of rough silicon nanowires

TL;DR: In this article, the authors report the electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20-300 nm in diameter.
Journal ArticleDOI

New Directions for Low-Dimensional Thermoelectric Materials**

TL;DR: In this article, the ability to achieve a simultaneous increase in the power factor and a decrease in the thermal conductivity of the same nanocomposite sample and for transport in the same direction is discussed.
Journal ArticleDOI

Effect of quantum-well structures on the thermoelectric figure of merit.

TL;DR: In this article, the authors proposed to use quantum-well superlattice structures to enhance the performance of thermoelectric coolers and showed that layering has the potential to increase significantly the figure of merit of a highly anisotropic material.
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Cubic AgPbmSbTe2+m: Bulk Thermoelectric Materials with High Figure of Merit

TL;DR: In the temperature range 600 to 900 kelvin, the AgPbmSbTe2+m material is expected to outperform all reported bulk thermoelectrics, thereby earmarking it as a material system for potential use in efficient thermoeLECTric power generation from heat sources.
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