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Field-effect transistor with perovskite oxide channel

Yukio Watanabe
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TLDR
In this article, a field effect transistor (FET) is described having a source, a drain, a channel formed between the source and the drain, and a gate electrode.
Abstract: 
A field-effect transistor (FET) is described having a source; a drain; a channel formed between the source and the drain; and a gate electrode. The channel is composed of a film layer of oxide having the perovskite structure comprised of: (1) at least one metal selected from the group consisting of the metal elements in Group IV through Group XI of the Periodic Table of Elements and Bi; and (2) at least one metal selected from the group consisting of alkali metals, alkaline earth metals and rare earth metals. The layer has a film thickness of not larger than 1000 Å and the electrical resistivity not less than 2 million centimeters. The channel of the oxide film layer is provided with a metal oxide insulator layer formed directly or through another metal oxide insulator layer and a gate electrode in electrical contact therewith. It is possible to make memories using this FET. In addition, it also becomes possible to reduce the size of devices using the FET of the invention.

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Citations
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Method for fabricating a semiconductor structure including a metal oxide interface with silicon

Jamal Ramdani, +2 more
TL;DR: In this paper, a method of fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface, forming on the surface of the silicon substrate, by atomic layer deposition (ALD), a seed layer (20;20') characterised by a silicate material and forming, by ALD, one or more layers of a high dielectric constant oxide (40) on the seed layer.
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Electrically variable multi-state resistance computing

Alex Ignatiev, +3 more
TL;DR: In this paper, an electrically operated, overwritable, multivalued, non-volatile resistive memory element is disclosed, which is characterized by the electrical control of resistance through the application of short duration low voltage electrical pulses at room temperature and with no applied magnetic field.
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Method for switching the properties of perovskite materials used in thin film resistors

Shangqing Liu, +2 more
TL;DR: In this article, a method for switching properties of perovskite thin film materials, including the colossal magnetoresitive (CMR) and high temperature superconducting (HTSC) materials, is provided.
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Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interpoly insulators

Jerome M. Eldridge, +2 more
TL;DR: In this article, an asymmetrical low tunnel barrier intergate insulator is proposed for programmable array type logic and/or memory devices with atomic layer deposition, which includes a metal oxide insulator selected from the group consisting of Al2O3, Ta2O5, TiO2, ZrO2 and Nb2O2.
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DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators

Leonard Forbes
TL;DR: In this paper, the memory cell is adapted to operate in a first and a second mode of operation, where the first mode is a dynamic mode and the second one is a repressed memory mode.
References
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Patent

Solid multi-component membranes, electrochemical reactor components, electrochemical reactors and use of membranes, reactor components, and reactor for oxidation reactions

Terry J. Mazanec, +3 more
TL;DR: In this article, solid membranes comprising an intimate, gas-impervious, multi-phase mixture of an electronically conductive material and an oxygen ion-conductive material, and/or mixed metal oxide of a perovskite structure are described.
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Short-channel effects in SOI MOSFETs

S. Veeraraghavan, +1 more
- 01 Mar 1989 - 
TL;DR: In this article, a short-channel effect exclusive to thin-film silicon-on-insulator (SOI) MOSFETs, back-surface charge modulation, is described.
Journal ArticleDOI

Epitaxial cuprate superconductor/ferroelectric heterostructures.

Ramamoorthy Ramesh, +7 more
- 17 May 1991 - 
TL;DR: Thin-film heterostructures of Bi4Ti3O12Bi2Sr2CuO6+x, have been grown on single crystals of SrTiO 3, LaAlO3, and MgAl2O4 by pulsed laser deposition and show the composition to be close to the nominal stoichiometry.
Journal ArticleDOI

Influence of electric fields on pinning in YBa2Cu3O7- delta films.

Jochen Mannhart, +3 more
- 07 Oct 1991 - 
TL;DR: In this article, the authors provided experimental evidence that the pinning force and the critical current density of YBa{sub 2}Cu{sub 3}O{sub 7{minus delta}} films can be controlled by electric fields.
Journal ArticleDOI

Electric field effect in high Tc superconducting ultrathin YBa2Cu3O7−x films

Xiaoxing Xi, +6 more
- 23 Dec 1991 - 
TL;DR: In this paper, a multilayer high Tc superconducting field effect transistor-like structure was made from ultrathin YBa2Cu3O7−x films, which had a forward bias breakdown voltage of about 20 V, allowing an electric field induced change in the channel layer of 1.25×1013 carrier/cm2 per volt of the gate voltage.