Patent
Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations
Reads0
Chats0
TLDR
In this paper, a gallium nitride layer is grown on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing, which can reach a temperature range from 550 to 1500° C. for less than 12 msec.Abstract:
Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.read more
Citations
More filters
Patent
Gas Supply Manifold And Method Of Supplying Gases To Chamber Using Same
Lucian Jdira,Herbert Terhorst,Michael W. Halpin,Carl White,Todd Dunn,Eric Shero,Melvin Verbass,Christopher Wuester,Kyle Fondurulia +8 more
TL;DR: In this paper, a gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas-inlet port of the Wafer Processing Reactor.
Patent
Pulsed remote plasma method and system
TL;DR: In this article, a system and method for providing pulsed excited species from a remote plasma unit to a reaction chamber is described. But it is not shown how to obtain the reaction chamber.
Patent
Method and systems for in-situ formation of intermediate reactive species
TL;DR: In this paper, a system and method for providing intermediate reactive species from a remote plasma unit to a reaction chamber is described, which includes a pressure control device to control a pressure at the remote plasmon unit as reactive species are provided to the reaction chamber.
Patent
Gas distribution system, reactor including the system, and methods of using the same
Mark R. Hawkins,Bradley Leonard Halleck,Tom Kirschenheiter,Benjamin Hossa,Clay Pottebaum,Claudio Miskys +5 more
TL;DR: In this paper, a gas distribution system, a gas-phase reactor system, and a method of using the gas distribution and the reactor system is described. But the authors do not discuss the use of the gas supply in the reaction chamber of the reactor.
Patent
Gas-phase reactor and system having exhaust plenum and components thereof
Eric Hill,Shawn G. Thomas +1 more
TL;DR: An improved exhaust system for a gas-phase reactor and a reactor and system including the exhaust system including a channel fluidly coupled to an exhaust plenum is described in this article. But it does not specify the design of the exhaust manifold.
References
More filters
Journal ArticleDOI
Luminescence properties of defects in GaN
TL;DR: In this paper, the structural and point defects caused by lattice and stacking mismatch with substrates are discussed. But even the best of the three binaries, InN, AIN and AIN as well as their ternary compounds, contain many structural defects, and these defects notably affect the electrical and optical properties of the host material.
Journal ArticleDOI
Celebrating the 100th anniversary of the Stoney equation for film stress: Developments from polycrystalline steel strips to single crystal silicon wafers
TL;DR: In this paper, a modified form of the Stoney equation, well known for elastic isotropic substrates, is derived for Si(001) and Si(111) wafers, using the elastic stiffness constants of silicon, cij, instead of the orientation averaged values E and ν, which do not have a meaning for elastically anisotropic single crystal materials.
Journal ArticleDOI
Domain epitaxy: A unified paradigm for thin film growth
Jagdish Narayan,B. C. Larson +1 more
TL;DR: In this paper, a unified model for thin film epitaxy where single crystal films with small and large lattice misfits are grown by domain matching epitaxy (DME) is presented.
Journal ArticleDOI
Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: Polarized internal reflection spectroscopy has been used to characterize HF-treated Si(111) surfaces as mentioned in this paper, and the silicon-hydrogen stretching vibrations indicate that the surface is well ordered, but is microscopically rough, with coupled monohydride, dihydride and trihydride termination.
Patent
Method for forming silicon-containing materials during a photoexcitation deposition process
TL;DR: In this paper, the UV photoexcitation process is used to remove native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films and increasing the excitation energy of precursors.